ION IMPLANTATION DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR BY IMPLANTATION OF BORON HYDRIDE CLUSTER IONS

PROBLEM TO BE SOLVED: To provide a magnetic yoke assembly for use in an ion source generating cluster ions by electron impact ionization.SOLUTION: A magnetic yoke assembly 500 is configured by arranging a pair of permanent magnets 510A and 510B between yokes 520A, 520B formed from a pair of magnetic...

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Hauptverfasser: HORSKY THOMAS N, JACOBSON DALE C
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creator HORSKY THOMAS N
JACOBSON DALE C
description PROBLEM TO BE SOLVED: To provide a magnetic yoke assembly for use in an ion source generating cluster ions by electron impact ionization.SOLUTION: A magnetic yoke assembly 500 is configured by arranging a pair of permanent magnets 510A and 510B between yokes 520A, 520B formed from a pair of magnetic pole pieces. The pair of magnetic pole pieces have openings 530A, 530B through which an electron beam passes. With such a configuration, a uniform magnetic field parallel to the electron beam is generated in an ionization chamber. Electrons in the electron beam incident from the openings follow a helical trajectory along the direction of lines of magnetic fields, and the electron beam is confined around the lines of magnetic fields.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title ION IMPLANTATION DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR BY IMPLANTATION OF BORON HYDRIDE CLUSTER IONS
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