ION IMPLANTATION DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR BY IMPLANTATION OF BORON HYDRIDE CLUSTER IONS
PROBLEM TO BE SOLVED: To provide a magnetic yoke assembly for use in an ion source generating cluster ions by electron impact ionization.SOLUTION: A magnetic yoke assembly 500 is configured by arranging a pair of permanent magnets 510A and 510B between yokes 520A, 520B formed from a pair of magnetic...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | HORSKY THOMAS N JACOBSON DALE C |
description | PROBLEM TO BE SOLVED: To provide a magnetic yoke assembly for use in an ion source generating cluster ions by electron impact ionization.SOLUTION: A magnetic yoke assembly 500 is configured by arranging a pair of permanent magnets 510A and 510B between yokes 520A, 520B formed from a pair of magnetic pole pieces. The pair of magnetic pole pieces have openings 530A, 530B through which an electron beam passes. With such a configuration, a uniform magnetic field parallel to the electron beam is generated in an ionization chamber. Electrons in the electron beam incident from the openings follow a helical trajectory along the direction of lines of magnetic fields, and the electron beam is confined around the lines of magnetic fields. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2014075346A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2014075346A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2014075346A3</originalsourceid><addsrcrecordid>eNqNjLEKwjAURbM4iPoPD3eh2lrnNHm1kSYp6YvQqRSJk9hC_X-M4OLmdO_lHO6SjcoaULqpuSFOnyHxqgQCNxI0UmUl2BI0N77kgrxT5gwtaiWskV6QdVB0vwdRL6yLpeqkUxJB1L4ldBBhu2aL-_CYw-abK7YtkUS1C9PYh3kabuEZXv2lOST7LDkd0yzn6V_SGyLsODA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ION IMPLANTATION DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR BY IMPLANTATION OF BORON HYDRIDE CLUSTER IONS</title><source>esp@cenet</source><creator>HORSKY THOMAS N ; JACOBSON DALE C</creator><creatorcontrib>HORSKY THOMAS N ; JACOBSON DALE C</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a magnetic yoke assembly for use in an ion source generating cluster ions by electron impact ionization.SOLUTION: A magnetic yoke assembly 500 is configured by arranging a pair of permanent magnets 510A and 510B between yokes 520A, 520B formed from a pair of magnetic pole pieces. The pair of magnetic pole pieces have openings 530A, 530B through which an electron beam passes. With such a configuration, a uniform magnetic field parallel to the electron beam is generated in an ionization chamber. Electrons in the electron beam incident from the openings follow a helical trajectory along the direction of lines of magnetic fields, and the electron beam is confined around the lines of magnetic fields.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140424&DB=EPODOC&CC=JP&NR=2014075346A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140424&DB=EPODOC&CC=JP&NR=2014075346A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HORSKY THOMAS N</creatorcontrib><creatorcontrib>JACOBSON DALE C</creatorcontrib><title>ION IMPLANTATION DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR BY IMPLANTATION OF BORON HYDRIDE CLUSTER IONS</title><description>PROBLEM TO BE SOLVED: To provide a magnetic yoke assembly for use in an ion source generating cluster ions by electron impact ionization.SOLUTION: A magnetic yoke assembly 500 is configured by arranging a pair of permanent magnets 510A and 510B between yokes 520A, 520B formed from a pair of magnetic pole pieces. The pair of magnetic pole pieces have openings 530A, 530B through which an electron beam passes. With such a configuration, a uniform magnetic field parallel to the electron beam is generated in an ionization chamber. Electrons in the electron beam incident from the openings follow a helical trajectory along the direction of lines of magnetic fields, and the electron beam is confined around the lines of magnetic fields.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLEKwjAURbM4iPoPD3eh2lrnNHm1kSYp6YvQqRSJk9hC_X-M4OLmdO_lHO6SjcoaULqpuSFOnyHxqgQCNxI0UmUl2BI0N77kgrxT5gwtaiWskV6QdVB0vwdRL6yLpeqkUxJB1L4ldBBhu2aL-_CYw-abK7YtkUS1C9PYh3kabuEZXv2lOST7LDkd0yzn6V_SGyLsODA</recordid><startdate>20140424</startdate><enddate>20140424</enddate><creator>HORSKY THOMAS N</creator><creator>JACOBSON DALE C</creator><scope>EVB</scope></search><sort><creationdate>20140424</creationdate><title>ION IMPLANTATION DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR BY IMPLANTATION OF BORON HYDRIDE CLUSTER IONS</title><author>HORSKY THOMAS N ; JACOBSON DALE C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2014075346A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HORSKY THOMAS N</creatorcontrib><creatorcontrib>JACOBSON DALE C</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HORSKY THOMAS N</au><au>JACOBSON DALE C</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ION IMPLANTATION DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR BY IMPLANTATION OF BORON HYDRIDE CLUSTER IONS</title><date>2014-04-24</date><risdate>2014</risdate><abstract>PROBLEM TO BE SOLVED: To provide a magnetic yoke assembly for use in an ion source generating cluster ions by electron impact ionization.SOLUTION: A magnetic yoke assembly 500 is configured by arranging a pair of permanent magnets 510A and 510B between yokes 520A, 520B formed from a pair of magnetic pole pieces. The pair of magnetic pole pieces have openings 530A, 530B through which an electron beam passes. With such a configuration, a uniform magnetic field parallel to the electron beam is generated in an ionization chamber. Electrons in the electron beam incident from the openings follow a helical trajectory along the direction of lines of magnetic fields, and the electron beam is confined around the lines of magnetic fields.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_JP2014075346A |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | ION IMPLANTATION DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR BY IMPLANTATION OF BORON HYDRIDE CLUSTER IONS |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T15%3A51%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HORSKY%20THOMAS%20N&rft.date=2014-04-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2014075346A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |