COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT

COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT

PROBLEM TO BE SOLVED: To provide a compound semiconductor integrated circuit including a number of metal layers each composed of at least one Cu layer.SOLUTION: A compound semiconductor integrated circuit comprises: a substrate; at least one compound semiconductor electronic device; a first metal la...

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Hauptverfasser: TAKATANI SHINICHIRO, HSIAO HSIEN-FU, WU YU-KAI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator TAKATANI SHINICHIRO
HSIAO HSIEN-FU
WU YU-KAI
description PROBLEM TO BE SOLVED: To provide a compound semiconductor integrated circuit including a number of metal layers each composed of at least one Cu layer.SOLUTION: A compound semiconductor integrated circuit comprises: a substrate; at least one compound semiconductor electronic device; a first metal layer; a protective layer, a plurality of second metal layers and at least one dielectric layer. The first metal layer contains Au and is electrically connected at least partially to the compound semiconductor electronic device. The protective layer covers the compound semiconductor electronic device and at least a part of the first metal layer. Each layer of the plurality of second metal layers at least contains a Cu layer and at least a part of the second metal layers is electrically connected to the first metal layer. The at least one dielectric layer isolate the second metal layers adjacent to each other. The second metal layer is used for formation of a passive electronic component.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT
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