SEMICONDUCTOR STORAGE DEVICE AND CONTROL METHOD OF THE SAME

SEMICONDUCTOR STORAGE DEVICE AND CONTROL METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a high quality semiconductor storage device.SOLUTION: The semiconductor storage device comprises: a storage part provided with a plurality of memory cells having a gate structure including a first insulator film formed on a semiconductor substrate, a charge storage l...

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1. Verfasser: ISHII HIRONORI
Format: Patent
Sprache:eng
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INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator ISHII HIRONORI
description PROBLEM TO BE SOLVED: To provide a high quality semiconductor storage device.SOLUTION: The semiconductor storage device comprises: a storage part provided with a plurality of memory cells having a gate structure including a first insulator film formed on a semiconductor substrate, a charge storage layer formed on the first insulator film, a second insulator film formed on the charge storage layer, and a control electrode formed on the second insulator film; a fuse area provided in the storage part and holding at least a first set number of times; and a control circuit that, when data is written to a selected memory cell from the plurality of memory cells, applies a program voltage added by a predetermined voltage according to the number of application to the control electrode of the selected memory cell until the first set number of times is reached, that performs verification operation to the selected memory cell when the number of application of the program voltage to the control electrode reaches the first set number of times, and that performs application of the program voltage to the control electrode when determining that data is not written to the selected memory cell.
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a fuse area provided in the storage part and holding at least a first set number of times; and a control circuit that, when data is written to a selected memory cell from the plurality of memory cells, applies a program voltage added by a predetermined voltage according to the number of application to the control electrode of the selected memory cell until the first set number of times is reached, that performs verification operation to the selected memory cell when the number of application of the program voltage to the control electrode reaches the first set number of times, and that performs application of the program voltage to the control electrode when determining that data is not written to the selected memory cell.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140320&amp;DB=EPODOC&amp;CC=JP&amp;NR=2014053060A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140320&amp;DB=EPODOC&amp;CC=JP&amp;NR=2014053060A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ISHII HIRONORI</creatorcontrib><title>SEMICONDUCTOR STORAGE DEVICE AND CONTROL METHOD OF THE SAME</title><description>PROBLEM TO BE SOLVED: To provide a high quality semiconductor storage device.SOLUTION: The semiconductor storage device comprises: a storage part provided with a plurality of memory cells having a gate structure including a first insulator film formed on a semiconductor substrate, a charge storage layer formed on the first insulator film, a second insulator film formed on the charge storage layer, and a control electrode formed on the second insulator film; 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a fuse area provided in the storage part and holding at least a first set number of times; and a control circuit that, when data is written to a selected memory cell from the plurality of memory cells, applies a program voltage added by a predetermined voltage according to the number of application to the control electrode of the selected memory cell until the first set number of times is reached, that performs verification operation to the selected memory cell when the number of application of the program voltage to the control electrode reaches the first set number of times, and that performs application of the program voltage to the control electrode when determining that data is not written to the selected memory cell.</abstract><oa>free_for_read</oa></addata></record>
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subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title SEMICONDUCTOR STORAGE DEVICE AND CONTROL METHOD OF THE SAME
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