SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which prevents a first conductive layer from being formed in a seam of an element isolation region; and which prevents, as a result, the first conductive layer from being electrically short-circuited to p...
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| creator | NISHITANI JUNICHIRO SEKI HIROTOSHI WATANABE KENJI |
| description | PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which prevents a first conductive layer from being formed in a seam of an element isolation region; and which prevents, as a result, the first conductive layer from being electrically short-circuited to prevent decrease in yield.SOLUTION: A semiconductor device comprises: an active region 101 surrounded by element isolation insulation films 20, 30; gate grooves 310 continuously extending across from the active region 101 to the element isolation region 200; first insulation films 21, 22 which cover internal surfaces of the gate grooves 310 located in the active region 101 and the element isolation region 200; a first conductive layer for filling in the gate grooves 310; and a cap insulation film for covering an upper surface of the first conductive layer. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
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