PZT FILM AND FORMATION METHOD OF PZT FILM

PROBLEM TO BE SOLVED: To provide a PZT film having a satisfactory electric characteristic, and a formation method of the PZT film.SOLUTION: In the formation method of the PZT film, the PZT film is deposited to a processing object W by sputtering using a target, which is composed of one or more of el...

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Bibliographische Detailangaben
Hauptverfasser:	KIMURA ISAO, HIROSE MITSUTAKA, MIYAGUCHI ARINORI, TABE ERIKO, SU HIROTSUNA, TANAKA MASARU, KOBAYASHI HIROKI
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a PZT film having a satisfactory electric characteristic, and a formation method of the PZT film.SOLUTION: In the formation method of the PZT film, the PZT film is deposited to a processing object W by sputtering using a target, which is composed of one or more of elements constituting lead zirconate titanate, in an oxygen-containing atmosphere. Then the processing object W in which the PZT film is deposited is heated to a second temperature in a Pb atmosphere.