SEMICONDUCTOR WAFER MADE OF SINGLE CRYSTAL SILICON, AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide semiconductor wafer made of single crystal silicon capable of reliably maintaining high gettering efficiency of a silicon semiconductor wafer even after the semiconductor wafer is stored for a comparatively long time, and a manufacturing method thereof.SOLUTION: A se...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	GUDRUN KISSINGER, MUELLER TIMO, DAVID COTTO, ANDREAS SATTLER
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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