PHOTON DETECTOR USING SUPERCONDUCTION TUNNEL JUNCTION
PROBLEM TO BE SOLVED: To provide a photon detector in which yield of production is improved and production processes are reduced.SOLUTION: A photon detector 31 is formed by embedding an STJ element 32 in a hole 33a formed on a surface of a substrate 33 in a rectangularly recessed state. A surface of...
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creator | KIKUCHI KATSUYA NARUSE MASATO ISHIZUKA TATSUO MEIREN HIROAKI AOYAGI MASAHIRO TAINO TORU |
description | PROBLEM TO BE SOLVED: To provide a photon detector in which yield of production is improved and production processes are reduced.SOLUTION: A photon detector 31 is formed by embedding an STJ element 32 in a hole 33a formed on a surface of a substrate 33 in a rectangularly recessed state. A surface of an upper electrode 36 composing the STJ element 32 and the surface of the substrate 33 are made flash with each other. A part of a lower electrode 34 is formed so as to be exposed to the hole 33a. A lower electrode wiring layer 38 for wiring the lower electrode 34 is formed on an upper left surface of the substrate in contact with a part of the lower electrode 34 exposed to the hole 33a. An upper electrode wiring layer 37 for wiring the upper electrode 36 is formed on an upper right surface of the substrate 33 in contact with the surface of the upper electrode 36. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2014022519A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2014022519A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2014022519A3</originalsourceid><addsrcrecordid>eNrjZDAN8PAP8fdTcHENcXUO8Q9SCA329HNXCA4NcA1y9vdzCXUO8QRKh4T6-bn6KHiF-oH5PAysaYk5xam8UJqbQcnNNcTZQze1ID8-tbggMTk1L7Uk3ivAyMDQxMDIyNTQ0tGYKEUAfYgooQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PHOTON DETECTOR USING SUPERCONDUCTION TUNNEL JUNCTION</title><source>esp@cenet</source><creator>KIKUCHI KATSUYA ; NARUSE MASATO ; ISHIZUKA TATSUO ; MEIREN HIROAKI ; AOYAGI MASAHIRO ; TAINO TORU</creator><creatorcontrib>KIKUCHI KATSUYA ; NARUSE MASATO ; ISHIZUKA TATSUO ; MEIREN HIROAKI ; AOYAGI MASAHIRO ; TAINO TORU</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a photon detector in which yield of production is improved and production processes are reduced.SOLUTION: A photon detector 31 is formed by embedding an STJ element 32 in a hole 33a formed on a surface of a substrate 33 in a rectangularly recessed state. A surface of an upper electrode 36 composing the STJ element 32 and the surface of the substrate 33 are made flash with each other. A part of a lower electrode 34 is formed so as to be exposed to the hole 33a. A lower electrode wiring layer 38 for wiring the lower electrode 34 is formed on an upper left surface of the substrate in contact with a part of the lower electrode 34 exposed to the hole 33a. An upper electrode wiring layer 37 for wiring the upper electrode 36 is formed on an upper right surface of the substrate 33 in contact with the surface of the upper electrode 36.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; COLORIMETRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT ; MEASURING ; PHYSICS ; RADIATION PYROMETRY ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140203&DB=EPODOC&CC=JP&NR=2014022519A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140203&DB=EPODOC&CC=JP&NR=2014022519A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIKUCHI KATSUYA</creatorcontrib><creatorcontrib>NARUSE MASATO</creatorcontrib><creatorcontrib>ISHIZUKA TATSUO</creatorcontrib><creatorcontrib>MEIREN HIROAKI</creatorcontrib><creatorcontrib>AOYAGI MASAHIRO</creatorcontrib><creatorcontrib>TAINO TORU</creatorcontrib><title>PHOTON DETECTOR USING SUPERCONDUCTION TUNNEL JUNCTION</title><description>PROBLEM TO BE SOLVED: To provide a photon detector in which yield of production is improved and production processes are reduced.SOLUTION: A photon detector 31 is formed by embedding an STJ element 32 in a hole 33a formed on a surface of a substrate 33 in a rectangularly recessed state. A surface of an upper electrode 36 composing the STJ element 32 and the surface of the substrate 33 are made flash with each other. A part of a lower electrode 34 is formed so as to be exposed to the hole 33a. A lower electrode wiring layer 38 for wiring the lower electrode 34 is formed on an upper left surface of the substrate in contact with a part of the lower electrode 34 exposed to the hole 33a. An upper electrode wiring layer 37 for wiring the upper electrode 36 is formed on an upper right surface of the substrate 33 in contact with the surface of the upper electrode 36.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>COLORIMETRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>RADIATION PYROMETRY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAN8PAP8fdTcHENcXUO8Q9SCA329HNXCA4NcA1y9vdzCXUO8QRKh4T6-bn6KHiF-oH5PAysaYk5xam8UJqbQcnNNcTZQze1ID8-tbggMTk1L7Uk3ivAyMDQxMDIyNTQ0tGYKEUAfYgooQ</recordid><startdate>20140203</startdate><enddate>20140203</enddate><creator>KIKUCHI KATSUYA</creator><creator>NARUSE MASATO</creator><creator>ISHIZUKA TATSUO</creator><creator>MEIREN HIROAKI</creator><creator>AOYAGI MASAHIRO</creator><creator>TAINO TORU</creator><scope>EVB</scope></search><sort><creationdate>20140203</creationdate><title>PHOTON DETECTOR USING SUPERCONDUCTION TUNNEL JUNCTION</title><author>KIKUCHI KATSUYA ; NARUSE MASATO ; ISHIZUKA TATSUO ; MEIREN HIROAKI ; AOYAGI MASAHIRO ; TAINO TORU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2014022519A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>COLORIMETRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>RADIATION PYROMETRY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>KIKUCHI KATSUYA</creatorcontrib><creatorcontrib>NARUSE MASATO</creatorcontrib><creatorcontrib>ISHIZUKA TATSUO</creatorcontrib><creatorcontrib>MEIREN HIROAKI</creatorcontrib><creatorcontrib>AOYAGI MASAHIRO</creatorcontrib><creatorcontrib>TAINO TORU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIKUCHI KATSUYA</au><au>NARUSE MASATO</au><au>ISHIZUKA TATSUO</au><au>MEIREN HIROAKI</au><au>AOYAGI MASAHIRO</au><au>TAINO TORU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PHOTON DETECTOR USING SUPERCONDUCTION TUNNEL JUNCTION</title><date>2014-02-03</date><risdate>2014</risdate><abstract>PROBLEM TO BE SOLVED: To provide a photon detector in which yield of production is improved and production processes are reduced.SOLUTION: A photon detector 31 is formed by embedding an STJ element 32 in a hole 33a formed on a surface of a substrate 33 in a rectangularly recessed state. A surface of an upper electrode 36 composing the STJ element 32 and the surface of the substrate 33 are made flash with each other. A part of a lower electrode 34 is formed so as to be exposed to the hole 33a. A lower electrode wiring layer 38 for wiring the lower electrode 34 is formed on an upper left surface of the substrate in contact with a part of the lower electrode 34 exposed to the hole 33a. An upper electrode wiring layer 37 for wiring the upper electrode 36 is formed on an upper right surface of the substrate 33 in contact with the surface of the upper electrode 36.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS COLORIMETRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING PHYSICS RADIATION PYROMETRY SEMICONDUCTOR DEVICES TESTING |
title | PHOTON DETECTOR USING SUPERCONDUCTION TUNNEL JUNCTION |
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