SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To form an SOI substrate composed of a perfect single crystal semiconductor layer in an easy process.SOLUTION: An SOI substrate manufacturing method comprises: forming a first single crystal semiconductor layer growth auxiliary film 3 and a second auxiliary film 4 which are for...

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Bibliographische Detailangaben

1. Verfasser:	SHIRATO TAKEHIDE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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