SIDE FACE IRRADIATION TYPE LED LIGHT-EMITTING DEVICE AND SIDE IRRADIATION TYPE LED LIGHT-EMITTING DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a side face irradiation type LED light-emitting device which does not cause color irregularity and a chronological degradation, thereby solving the problem of a conventional side face irradiation type LED light-emitting device that a variation in thickness or partial...

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1. Verfasser:	KANAMARU ATSUSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	KANAMARU ATSUSHI
description	PROBLEM TO BE SOLVED: To provide a side face irradiation type LED light-emitting device which does not cause color irregularity and a chronological degradation, thereby solving the problem of a conventional side face irradiation type LED light-emitting device that a variation in thickness or partial degradation of a phosphor layer disposed in the side face direction causes color irregularity to occur in the light emitted to the periphery and also gives rise to a chronological degradation, thereby making excellent side face irradiation disabled, and to provide a method for manufacturing the side face irradiation type LED light-emitting device.SOLUTION: In the side face irradiation type LED light-emitting device, an LED element is mounted on a substrate, and the LED element on the substrate is coated with light transmitting encapsulation resin, with the top of the encapsulation resin further covered with a reflector layer. The encapsulation resin is provided with a phosphor frame body on its peripheral side face, and a light transmitting resin layer is formed on the outside of the phosphor frame body.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	SIDE FACE IRRADIATION TYPE LED LIGHT-EMITTING DEVICE AND SIDE IRRADIATION TYPE LED LIGHT-EMITTING DEVICE MANUFACTURING METHOD
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