SEMICONDUCTOR OPTICAL PHASE MODULATOR
PROBLEM TO BE SOLVED: To provide an electrically and optically stable semiconductor optical phase modulator which is provided with a structure for extracting holes from a p-type semiconductor barrier layer, be it in an npin structure or in an nipn structure, without increasing a process load and wit...
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| creator | MOTAI HIROYASU WATANABE HIROSHI ISHIBASHI TADAO KAYAO NORIHIDE |
| description | PROBLEM TO BE SOLVED: To provide an electrically and optically stable semiconductor optical phase modulator which is provided with a structure for extracting holes from a p-type semiconductor barrier layer, be it in an npin structure or in an nipn structure, without increasing a process load and without reducing design flexibility.SOLUTION: A semiconductor optical phase modulator is provided at least in one location in an optical waveguide 31 with a structure 51 for extracting holes from a p-type semiconductor barrier layer 14 of the optical waveguide 31. The structure 51 includes a wiring portion 52 which is provided in a direction crossing the optical waveguide 31 and comprises a semiconductor that includes the p-type semiconductor barrier layer 14, and a p-type semiconductor barrier layer connection portion 53 which is connected to an end of the wiring portion 42 and comprises a semiconductor that includes the p-type semiconductor barrier layer 14 which is exposed at least in part. An exposed section 14a of the p-type semiconductor barrier layer 14 is electrically connected with an electrode 16 located above a second n-type semiconductor cladding layer 15. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2013246223A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2013246223A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2013246223A3</originalsourceid><addsrcrecordid>eNrjZFANdvX1dPb3cwl1DvEPUvAPCPF0dvRRCPBwDHZV8PV3CfVxBIrzMLCmJeYUp_JCaW4GJTfXEGcP3dSC_PjU4oLE5NS81JJ4rwAjA0NjIxMzIyNjR2OiFAEA_lIj5Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR OPTICAL PHASE MODULATOR</title><source>esp@cenet</source><creator>MOTAI HIROYASU ; WATANABE HIROSHI ; ISHIBASHI TADAO ; KAYAO NORIHIDE</creator><creatorcontrib>MOTAI HIROYASU ; WATANABE HIROSHI ; ISHIBASHI TADAO ; KAYAO NORIHIDE</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide an electrically and optically stable semiconductor optical phase modulator which is provided with a structure for extracting holes from a p-type semiconductor barrier layer, be it in an npin structure or in an nipn structure, without increasing a process load and without reducing design flexibility.SOLUTION: A semiconductor optical phase modulator is provided at least in one location in an optical waveguide 31 with a structure 51 for extracting holes from a p-type semiconductor barrier layer 14 of the optical waveguide 31. The structure 51 includes a wiring portion 52 which is provided in a direction crossing the optical waveguide 31 and comprises a semiconductor that includes the p-type semiconductor barrier layer 14, and a p-type semiconductor barrier layer connection portion 53 which is connected to an end of the wiring portion 42 and comprises a semiconductor that includes the p-type semiconductor barrier layer 14 which is exposed at least in part. An exposed section 14a of the p-type semiconductor barrier layer 14 is electrically connected with an electrode 16 located above a second n-type semiconductor cladding layer 15.</description><language>eng</language><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; FREQUENCY-CHANGING ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131209&DB=EPODOC&CC=JP&NR=2013246223A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131209&DB=EPODOC&CC=JP&NR=2013246223A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MOTAI HIROYASU</creatorcontrib><creatorcontrib>WATANABE HIROSHI</creatorcontrib><creatorcontrib>ISHIBASHI TADAO</creatorcontrib><creatorcontrib>KAYAO NORIHIDE</creatorcontrib><title>SEMICONDUCTOR OPTICAL PHASE MODULATOR</title><description>PROBLEM TO BE SOLVED: To provide an electrically and optically stable semiconductor optical phase modulator which is provided with a structure for extracting holes from a p-type semiconductor barrier layer, be it in an npin structure or in an nipn structure, without increasing a process load and without reducing design flexibility.SOLUTION: A semiconductor optical phase modulator is provided at least in one location in an optical waveguide 31 with a structure 51 for extracting holes from a p-type semiconductor barrier layer 14 of the optical waveguide 31. The structure 51 includes a wiring portion 52 which is provided in a direction crossing the optical waveguide 31 and comprises a semiconductor that includes the p-type semiconductor barrier layer 14, and a p-type semiconductor barrier layer connection portion 53 which is connected to an end of the wiring portion 42 and comprises a semiconductor that includes the p-type semiconductor barrier layer 14 which is exposed at least in part. An exposed section 14a of the p-type semiconductor barrier layer 14 is electrically connected with an electrode 16 located above a second n-type semiconductor cladding layer 15.</description><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</subject><subject>FREQUENCY-CHANGING</subject><subject>NON-LINEAR OPTICS</subject><subject>OPTICAL ANALOGUE/DIGITAL CONVERTERS</subject><subject>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</subject><subject>OPTICAL LOGIC ELEMENTS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFANdvX1dPb3cwl1DvEPUvAPCPF0dvRRCPBwDHZV8PV3CfVxBIrzMLCmJeYUp_JCaW4GJTfXEGcP3dSC_PjU4oLE5NS81JJ4rwAjA0NjIxMzIyNjR2OiFAEA_lIj5Q</recordid><startdate>20131209</startdate><enddate>20131209</enddate><creator>MOTAI HIROYASU</creator><creator>WATANABE HIROSHI</creator><creator>ISHIBASHI TADAO</creator><creator>KAYAO NORIHIDE</creator><scope>EVB</scope></search><sort><creationdate>20131209</creationdate><title>SEMICONDUCTOR OPTICAL PHASE MODULATOR</title><author>MOTAI HIROYASU ; WATANABE HIROSHI ; ISHIBASHI TADAO ; KAYAO NORIHIDE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2013246223A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING</topic><topic>FREQUENCY-CHANGING</topic><topic>NON-LINEAR OPTICS</topic><topic>OPTICAL ANALOGUE/DIGITAL CONVERTERS</topic><topic>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</topic><topic>OPTICAL LOGIC ELEMENTS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</topic><toplevel>online_resources</toplevel><creatorcontrib>MOTAI HIROYASU</creatorcontrib><creatorcontrib>WATANABE HIROSHI</creatorcontrib><creatorcontrib>ISHIBASHI TADAO</creatorcontrib><creatorcontrib>KAYAO NORIHIDE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MOTAI HIROYASU</au><au>WATANABE HIROSHI</au><au>ISHIBASHI TADAO</au><au>KAYAO NORIHIDE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR OPTICAL PHASE MODULATOR</title><date>2013-12-09</date><risdate>2013</risdate><abstract>PROBLEM TO BE SOLVED: To provide an electrically and optically stable semiconductor optical phase modulator which is provided with a structure for extracting holes from a p-type semiconductor barrier layer, be it in an npin structure or in an nipn structure, without increasing a process load and without reducing design flexibility.SOLUTION: A semiconductor optical phase modulator is provided at least in one location in an optical waveguide 31 with a structure 51 for extracting holes from a p-type semiconductor barrier layer 14 of the optical waveguide 31. The structure 51 includes a wiring portion 52 which is provided in a direction crossing the optical waveguide 31 and comprises a semiconductor that includes the p-type semiconductor barrier layer 14, and a p-type semiconductor barrier layer connection portion 53 which is connected to an end of the wiring portion 42 and comprises a semiconductor that includes the p-type semiconductor barrier layer 14 which is exposed at least in part. An exposed section 14a of the p-type semiconductor barrier layer 14 is electrically connected with an electrode 16 located above a second n-type semiconductor cladding layer 15.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
| title | SEMICONDUCTOR OPTICAL PHASE MODULATOR |
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