MAGNETIC MEMORY ELEMENT AND METHOD FOR MANUFACTURING THE SAME

MAGNETIC MEMORY ELEMENT AND METHOD FOR MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a magnetic memory element capable of suppressing insulation failure, and a method for manufacturing the magnetic memory element.SOLUTION: A magnetic memory element according to an embodiment includes: a first magnetic layer 13; a second magnetic layer 15; an intermed...

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Hauptverfasser: KAMATA SHINGI, KASHIWADA SAORI, KATO YUSHI, KITAGAWA EIJI, DAIBO TATATOMI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator KAMATA SHINGI
KASHIWADA SAORI
KATO YUSHI
KITAGAWA EIJI
DAIBO TATATOMI
description PROBLEM TO BE SOLVED: To provide a magnetic memory element capable of suppressing insulation failure, and a method for manufacturing the magnetic memory element.SOLUTION: A magnetic memory element according to an embodiment includes: a first magnetic layer 13; a second magnetic layer 15; an intermediate layer 14 disposed between the first magnetic layer and the second magnetic layer; a layer 12 which is disposed on a face of the first magnetic layer, the face being opposite of a face where the intermediate layer is disposed, and includes B and one or more elements selected from among Hf, Al and Mg; and an insulation layer 20 which is disposed on a side wall of the intermediate layer and includes one or more elements selected from among Hf, Al and Mg included in the layer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title MAGNETIC MEMORY ELEMENT AND METHOD FOR MANUFACTURING THE SAME
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