ROTARY BLADE VAPOR DEPOSITION EQUIPMENT
PROBLEM TO BE SOLVED: To obtain a structure of equipment satisfying the requirements: in mass production using chemical vapor deposition (CVD) in which a crystal film is deposited on a substrate, a batch size is increased while improving uniformity; a gas flow rate is increased without increasing a...
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creator | TAKEDA MASAYUKI NISHIZAWA TAKESHI MURA NAOMI |
description | PROBLEM TO BE SOLVED: To obtain a structure of equipment satisfying the requirements: in mass production using chemical vapor deposition (CVD) in which a crystal film is deposited on a substrate, a batch size is increased while improving uniformity; a gas flow rate is increased without increasing a gas flow amount; and HVPE (Hydride Vapor Phase Epitaxy) can be used as a method other than organic metal CVD which is expensive and consumes a large amount of carry gas.SOLUTION: Rotary blade vapor deposition equipment is provided in which susceptors are arranged like turbine blades, and a substrate is placed on a surface of the susceptor. The rotation of the blades provides high-speed line velocity. The number of wafers which can be processed once (a batch size) can be increased according to the number of the blades. This rotation also functions as an exhaust mechanism to allow the equipment to be downsized at the same time. The introduction of a heating joint for vaporizing solid metal and guiding the vaporized metal remaining at a high temperature allows liquid or solid materials to be used to reduce a manufacturing cost. |
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The rotation of the blades provides high-speed line velocity. The number of wafers which can be processed once (a batch size) can be increased according to the number of the blades. This rotation also functions as an exhaust mechanism to allow the equipment to be downsized at the same time. The introduction of a heating joint for vaporizing solid metal and guiding the vaporized metal remaining at a high temperature allows liquid or solid materials to be used to reduce a manufacturing cost.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131121&DB=EPODOC&CC=JP&NR=2013235947A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131121&DB=EPODOC&CC=JP&NR=2013235947A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKEDA MASAYUKI</creatorcontrib><creatorcontrib>NISHIZAWA TAKESHI</creatorcontrib><creatorcontrib>MURA NAOMI</creatorcontrib><title>ROTARY BLADE VAPOR DEPOSITION EQUIPMENT</title><description>PROBLEM TO BE SOLVED: To obtain a structure of equipment satisfying the requirements: in mass production using chemical vapor deposition (CVD) in which a crystal film is deposited on a substrate, a batch size is increased while improving uniformity; a gas flow rate is increased without increasing a gas flow amount; and HVPE (Hydride Vapor Phase Epitaxy) can be used as a method other than organic metal CVD which is expensive and consumes a large amount of carry gas.SOLUTION: Rotary blade vapor deposition equipment is provided in which susceptors are arranged like turbine blades, and a substrate is placed on a surface of the susceptor. The rotation of the blades provides high-speed line velocity. The number of wafers which can be processed once (a batch size) can be increased according to the number of the blades. This rotation also functions as an exhaust mechanism to allow the equipment to be downsized at the same time. The introduction of a heating joint for vaporizing solid metal and guiding the vaporized metal remaining at a high temperature allows liquid or solid materials to be used to reduce a manufacturing cost.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAP8g9xDIpUcPJxdHFVCHMM8A9ScHEN8A_2DPH091NwDQz1DPB19QvhYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBobGRsamlibmjsZEKQIAQVYkgQ</recordid><startdate>20131121</startdate><enddate>20131121</enddate><creator>TAKEDA MASAYUKI</creator><creator>NISHIZAWA TAKESHI</creator><creator>MURA NAOMI</creator><scope>EVB</scope></search><sort><creationdate>20131121</creationdate><title>ROTARY BLADE VAPOR DEPOSITION EQUIPMENT</title><author>TAKEDA MASAYUKI ; NISHIZAWA TAKESHI ; MURA NAOMI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2013235947A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>TAKEDA MASAYUKI</creatorcontrib><creatorcontrib>NISHIZAWA TAKESHI</creatorcontrib><creatorcontrib>MURA NAOMI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAKEDA MASAYUKI</au><au>NISHIZAWA TAKESHI</au><au>MURA NAOMI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ROTARY BLADE VAPOR DEPOSITION EQUIPMENT</title><date>2013-11-21</date><risdate>2013</risdate><abstract>PROBLEM TO BE SOLVED: To obtain a structure of equipment satisfying the requirements: in mass production using chemical vapor deposition (CVD) in which a crystal film is deposited on a substrate, a batch size is increased while improving uniformity; a gas flow rate is increased without increasing a gas flow amount; and HVPE (Hydride Vapor Phase Epitaxy) can be used as a method other than organic metal CVD which is expensive and consumes a large amount of carry gas.SOLUTION: Rotary blade vapor deposition equipment is provided in which susceptors are arranged like turbine blades, and a substrate is placed on a surface of the susceptor. The rotation of the blades provides high-speed line velocity. The number of wafers which can be processed once (a batch size) can be increased according to the number of the blades. This rotation also functions as an exhaust mechanism to allow the equipment to be downsized at the same time. The introduction of a heating joint for vaporizing solid metal and guiding the vaporized metal remaining at a high temperature allows liquid or solid materials to be used to reduce a manufacturing cost.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | ROTARY BLADE VAPOR DEPOSITION EQUIPMENT |
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