INTEGRATED THIN FILM PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD OF THE SAME

INTEGRATED THIN FILM PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide an integrated thin film photoelectric conversion device excellent in photoelectric conversion characteristics and reliability at low cost.SOLUTION: An integrated thin film photoelectric conversion device of a present embodiment comprises a back transparent conductive...

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Hauptverfasser: YOSHIDA KO, GOTO MASAHIRO
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator YOSHIDA KO
GOTO MASAHIRO
description PROBLEM TO BE SOLVED: To provide an integrated thin film photoelectric conversion device excellent in photoelectric conversion characteristics and reliability at low cost.SOLUTION: An integrated thin film photoelectric conversion device of a present embodiment comprises a back transparent conductive layer (2), a laser beam absorption layer (3), a light reflective back electrode layer (4), a semiconductor photoelectric conversion unit (5) and a light-receiving surface transparent electrode layer (6) which are sequentially stacked on a translucent substrate 1. The light reflective back electrode layer (4) includes a metal layer. The laser beam absorption layer (3) has conductivity capable of electrically connecting the back transparent conductive layer (2) and the light reflective back electrode layer (4) at least in a film thickness direction of the layers. Each layer is divided into a plurality of strip-like photoelectric conversion cell regions and the plurality of photoelectric conversion cells are electrically connected in series.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title INTEGRATED THIN FILM PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD OF THE SAME
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