EXPOSURE METHOD AND PATTERN FORMATION METHOD
PROBLEM TO BE SOLVED: To provide a pattern formation method for forming a guide with high accuracy and obtaining a desired micro phase separation pattern.SOLUTION: A pattern formation method according to an embodiment comprises the steps of: irradiating a photo mask where a periodic pattern having o...
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creator | FUKUHARA KAZUYA HATTORI SHIGEKI KIYONO YURIKO HIENO ATSUSHI NAKAMURA HIROKO SUGANO MASAHIRO |
description | PROBLEM TO BE SOLVED: To provide a pattern formation method for forming a guide with high accuracy and obtaining a desired micro phase separation pattern.SOLUTION: A pattern formation method according to an embodiment comprises the steps of: irradiating a photo mask where a periodic pattern having openings whose centers are arranged so as to be capable of being described with a two-dimensional hexagonal lattice is formed, with illumination light; and performing exposure by projecting diffraction light from the photo mask on a substrate through a projection optical system. The illumination has first to third light emitting regions. The photo mask has a first opening and second to seventh openings whose center positions are at vertex positions of a regular hexagon whose center position is at the position of the first opening. A direction in which the illumination light enters the photo mask is on three planes determined by the first opening, the second, fourth, and sixth openings, and optical axis; and includes a direction inclined at an angle sin(2 λ/3 Pn) to the optical axis, where λ is a wavelength of the light, P is an on-substrate reduced value of an interval between the center of the first opening and the centers of the second to seventh openings, and n is a refraction index of a medium between the projection optical system and the substrate. |
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The illumination has first to third light emitting regions. The photo mask has a first opening and second to seventh openings whose center positions are at vertex positions of a regular hexagon whose center position is at the position of the first opening. A direction in which the illumination light enters the photo mask is on three planes determined by the first opening, the second, fourth, and sixth openings, and optical axis; and includes a direction inclined at an angle sin(2 λ/3 Pn) to the optical axis, where λ is a wavelength of the light, P is an on-substrate reduced value of an interval between the center of the first opening and the centers of the second to seventh openings, and n is a refraction index of a medium between the projection optical system and the substrate.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131003&DB=EPODOC&CC=JP&NR=2013201356A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131003&DB=EPODOC&CC=JP&NR=2013201356A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FUKUHARA KAZUYA</creatorcontrib><creatorcontrib>HATTORI SHIGEKI</creatorcontrib><creatorcontrib>KIYONO YURIKO</creatorcontrib><creatorcontrib>HIENO ATSUSHI</creatorcontrib><creatorcontrib>NAKAMURA HIROKO</creatorcontrib><creatorcontrib>SUGANO MASAHIRO</creatorcontrib><title>EXPOSURE METHOD AND PATTERN FORMATION METHOD</title><description>PROBLEM TO BE SOLVED: To provide a pattern formation method for forming a guide with high accuracy and obtaining a desired micro phase separation pattern.SOLUTION: A pattern formation method according to an embodiment comprises the steps of: irradiating a photo mask where a periodic pattern having openings whose centers are arranged so as to be capable of being described with a two-dimensional hexagonal lattice is formed, with illumination light; and performing exposure by projecting diffraction light from the photo mask on a substrate through a projection optical system. 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The illumination has first to third light emitting regions. The photo mask has a first opening and second to seventh openings whose center positions are at vertex positions of a regular hexagon whose center position is at the position of the first opening. A direction in which the illumination light enters the photo mask is on three planes determined by the first opening, the second, fourth, and sixth openings, and optical axis; and includes a direction inclined at an angle sin(2 λ/3 Pn) to the optical axis, where λ is a wavelength of the light, P is an on-substrate reduced value of an interval between the center of the first opening and the centers of the second to seventh openings, and n is a refraction index of a medium between the projection optical system and the substrate.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
title | EXPOSURE METHOD AND PATTERN FORMATION METHOD |
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