METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor integrated circuit device which allow for stabilized etching.SOLUTION: The method of manufacturing a semiconductor integrated circuit device includes a step for forming a field effect transistor including a gate electrode 120, sacrifice nitride film spacer 150 formed on both sidewalls of the gate electrode, and a source/drain region 160 self-aligned with the sacrifice nitride film spacer, a step for selectively removing the sacrifice nitride film spacer by hydrofluoric acid having a selective ratio of the nitride film for the oxide film of larger than 1, and a step for forming a stress film, which derives tensile or compressive stress in the channel region of the field effect transistor, on both sidewalls of the gate electrode.