SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves downsizing by forming a plurality of semiconductor chips into a vertically-stacked structure; and to provide a semiconductor device manufacturing method in which the number of manufacturing processes is significantly reduced.SOLU...
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creator | YAMAGATA OSATAKE CHIKAI TOMOYA ITAKURA SATORU HORI MASAHIKO SAWACHI SHIGENORI KATSUMATA AKIO INOUE KOJI |
description | PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves downsizing by forming a plurality of semiconductor chips into a vertically-stacked structure; and to provide a semiconductor device manufacturing method in which the number of manufacturing processes is significantly reduced.SOLUTION: A semiconductor device comprises: a semiconductor element 2; a support substrate 1; an insulating material layer 4 for encapsulating the semiconductor element 2 and surroundings of the semiconductor element 2; a metal thin film wiring layer 6 provided in the insulating material layer 4 and a part of which is exposed on an outer surface; and a metal via 9 provided in the insulating material layer 4 and electrically connected to the metal thin film wiring layer 6. There is a plurality of numbers of semiconductor elements 2. Each semiconductor element 2 is stacked via an insulating material such that a circuit surface faces the metal thin film wiring layer 6 side. Electrode pads of each semiconductor element 2 are exposed without being shielded by another semiconductor element stacked thereon and electrically connected with the metal thin film wiring layer. |
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There is a plurality of numbers of semiconductor elements 2. Each semiconductor element 2 is stacked via an insulating material such that a circuit surface faces the metal thin film wiring layer 6 side. 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There is a plurality of numbers of semiconductor elements 2. Each semiconductor element 2 is stacked via an insulating material such that a circuit surface faces the metal thin film wiring layer 6 side. 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There is a plurality of numbers of semiconductor elements 2. Each semiconductor element 2 is stacked via an insulating material such that a circuit surface faces the metal thin film wiring layer 6 side. Electrode pads of each semiconductor element 2 are exposed without being shielded by another semiconductor element stacked thereon and electrically connected with the metal thin film wiring layer.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
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