METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device with a suppressed increase in off current or a reduced negative shift of a threshold voltage.SOLUTION: The method comprises the steps of: forming a gate electrode over a substrate; forming a gate insulating layer over...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KISHIDA HIDEYUKI, IMAFUJI TOSHIKAZU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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