Cu LAYER FORMATION METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a Cu film formation method which can tightly bury conductive materials of Cu inside fine recesses and which is optimal for obtaining wiring excellent in conductivity with high productivity.SOLUTION: A Cu layer formation method of an embodiment in which Cu is buried i...

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Bibliographische Detailangaben
Hauptverfasser:	SAKAMOTO YUTA, HAMAGUCHI JUNICHI, IWASAWA HIROAKI, TAKEDA NAOKI, UCHIDA YOHEI, ENDO YOHEI, NAKAMURA SHINYA, KODAIRA SHUJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a Cu film formation method which can tightly bury conductive materials of Cu inside fine recesses and which is optimal for obtaining wiring excellent in conductivity with high productivity.SOLUTION: A Cu layer formation method of an embodiment in which Cu is buried in recesses 16 formed on a surface of a workpiece 11, comprises: a first step of forming a Cu film 17 on a surface of the workpiece including inner surfaces of the recesses 16; and a second step of burying Cu in the recesses by flowing the Cu film due to a reflow process. In the middle of the second step, Cu atoms and Cu ions are supplied to the surface of the workpiece.