SEMICONDUCTOR DEVICE MANUFACTURING METHOD

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a technology capable of improving reliability of a semiconductor device; and especially a technology capable of obtaining stable performance characteristics in a semiconductor device having a field effect transistor with a gate electrode composed of a metal material....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YAMASHITA TOMOHIRO, NISHIDA MASAO, SHINOHARA MASAAKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator YAMASHITA TOMOHIRO
NISHIDA MASAO
SHINOHARA MASAAKI
description PROBLEM TO BE SOLVED: To provide a technology capable of improving reliability of a semiconductor device; and especially a technology capable of obtaining stable performance characteristics in a semiconductor device having a field effect transistor with a gate electrode composed of a metal material.SOLUTION: A semiconductor device manufacturing method comprises: forming a gate electrode 13n or a gate electrode 13p by dry etching using a resist pattern 12 as a mask; subsequently, performing an ashing treatment in a plasma atmosphere containing oxygen and hydrogen to remove the resist pattern 12; oxidizing a reaction product 14 adhered to a lateral face of the gate electrode 13n or the gate electrode 13p; and subsequently, performing a cleaning treatment to remove the reaction product 14.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2013093438A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2013093438A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2013093438A3</originalsourceid><addsrcrecordid>eNrjZNAMdvX1dPb3cwl1DvEPUnBxDfN0dlXwdfQLdXN0DgkN8vRzV_B1DfHwd-FhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhsYGlsYmxhaOxkQpAgCOWyUK</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE MANUFACTURING METHOD</title><source>esp@cenet</source><creator>YAMASHITA TOMOHIRO ; NISHIDA MASAO ; SHINOHARA MASAAKI</creator><creatorcontrib>YAMASHITA TOMOHIRO ; NISHIDA MASAO ; SHINOHARA MASAAKI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a technology capable of improving reliability of a semiconductor device; and especially a technology capable of obtaining stable performance characteristics in a semiconductor device having a field effect transistor with a gate electrode composed of a metal material.SOLUTION: A semiconductor device manufacturing method comprises: forming a gate electrode 13n or a gate electrode 13p by dry etching using a resist pattern 12 as a mask; subsequently, performing an ashing treatment in a plasma atmosphere containing oxygen and hydrogen to remove the resist pattern 12; oxidizing a reaction product 14 adhered to a lateral face of the gate electrode 13n or the gate electrode 13p; and subsequently, performing a cleaning treatment to remove the reaction product 14.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20130516&amp;DB=EPODOC&amp;CC=JP&amp;NR=2013093438A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76292</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20130516&amp;DB=EPODOC&amp;CC=JP&amp;NR=2013093438A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAMASHITA TOMOHIRO</creatorcontrib><creatorcontrib>NISHIDA MASAO</creatorcontrib><creatorcontrib>SHINOHARA MASAAKI</creatorcontrib><title>SEMICONDUCTOR DEVICE MANUFACTURING METHOD</title><description>PROBLEM TO BE SOLVED: To provide a technology capable of improving reliability of a semiconductor device; and especially a technology capable of obtaining stable performance characteristics in a semiconductor device having a field effect transistor with a gate electrode composed of a metal material.SOLUTION: A semiconductor device manufacturing method comprises: forming a gate electrode 13n or a gate electrode 13p by dry etching using a resist pattern 12 as a mask; subsequently, performing an ashing treatment in a plasma atmosphere containing oxygen and hydrogen to remove the resist pattern 12; oxidizing a reaction product 14 adhered to a lateral face of the gate electrode 13n or the gate electrode 13p; and subsequently, performing a cleaning treatment to remove the reaction product 14.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAMdvX1dPb3cwl1DvEPUnBxDfN0dlXwdfQLdXN0DgkN8vRzV_B1DfHwd-FhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGhsYGlsYmxhaOxkQpAgCOWyUK</recordid><startdate>20130516</startdate><enddate>20130516</enddate><creator>YAMASHITA TOMOHIRO</creator><creator>NISHIDA MASAO</creator><creator>SHINOHARA MASAAKI</creator><scope>EVB</scope></search><sort><creationdate>20130516</creationdate><title>SEMICONDUCTOR DEVICE MANUFACTURING METHOD</title><author>YAMASHITA TOMOHIRO ; NISHIDA MASAO ; SHINOHARA MASAAKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2013093438A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YAMASHITA TOMOHIRO</creatorcontrib><creatorcontrib>NISHIDA MASAO</creatorcontrib><creatorcontrib>SHINOHARA MASAAKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YAMASHITA TOMOHIRO</au><au>NISHIDA MASAO</au><au>SHINOHARA MASAAKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE MANUFACTURING METHOD</title><date>2013-05-16</date><risdate>2013</risdate><abstract>PROBLEM TO BE SOLVED: To provide a technology capable of improving reliability of a semiconductor device; and especially a technology capable of obtaining stable performance characteristics in a semiconductor device having a field effect transistor with a gate electrode composed of a metal material.SOLUTION: A semiconductor device manufacturing method comprises: forming a gate electrode 13n or a gate electrode 13p by dry etching using a resist pattern 12 as a mask; subsequently, performing an ashing treatment in a plasma atmosphere containing oxygen and hydrogen to remove the resist pattern 12; oxidizing a reaction product 14 adhered to a lateral face of the gate electrode 13n or the gate electrode 13p; and subsequently, performing a cleaning treatment to remove the reaction product 14.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2013093438A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE MANUFACTURING METHOD
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T10%3A07%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YAMASHITA%20TOMOHIRO&rft.date=2013-05-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2013093438A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true