PHOTOELECTRIC CONVERSION DEVICE, PHOTOELECTRIC CONVERSION ARRAY AND IMAGING APPARATUS
PROBLEM TO BE SOLVED: To provide a technique for preventing a reverse current of a p-n junction having a photoelectric conversion function from becoming as large as a reverse current of a Schottky junction.SOLUTION: A photoelectric conversion device at least comprises: a p-n junction having a photoe...
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| creator | KIMINO KAZUYA HAYASHI YUTAKA OTA TOSHITAKA NAGAMUNE YASUSHI NEGORO TAKAAKI WATANABE HIROBUMI |
| description | PROBLEM TO BE SOLVED: To provide a technique for preventing a reverse current of a p-n junction having a photoelectric conversion function from becoming as large as a reverse current of a Schottky junction.SOLUTION: A photoelectric conversion device at least comprises: a p-n junction having a photoelectric conversion function; and a field-effect transistor. When one semiconductor region of the p-n junction to which a source of the field-effect transistor is connected becomes a zero potential or a reverse-biased potential with respect to the other semiconductor region, saturation control is performed, by supplying a gate potential with which the field-effect transistor is brought into conduction, such that the p-n junction is not biased to a deep forward voltage even if light is emitted onto either one of the two semiconductor regions of different conductivity types. |
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When one semiconductor region of the p-n junction to which a source of the field-effect transistor is connected becomes a zero potential or a reverse-biased potential with respect to the other semiconductor region, saturation control is performed, by supplying a gate potential with which the field-effect transistor is brought into conduction, such that the p-n junction is not biased to a deep forward voltage even if light is emitted onto either one of the two semiconductor regions of different conductivity types.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC COMMUNICATION TECHNIQUE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PICTORIAL COMMUNICATION, e.g. TELEVISION ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130509&DB=EPODOC&CC=JP&NR=2013085030A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130509&DB=EPODOC&CC=JP&NR=2013085030A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIMINO KAZUYA</creatorcontrib><creatorcontrib>HAYASHI YUTAKA</creatorcontrib><creatorcontrib>OTA TOSHITAKA</creatorcontrib><creatorcontrib>NAGAMUNE YASUSHI</creatorcontrib><creatorcontrib>NEGORO TAKAAKI</creatorcontrib><creatorcontrib>WATANABE HIROBUMI</creatorcontrib><title>PHOTOELECTRIC CONVERSION DEVICE, PHOTOELECTRIC CONVERSION ARRAY AND IMAGING APPARATUS</title><description>PROBLEM TO BE SOLVED: To provide a technique for preventing a reverse current of a p-n junction having a photoelectric conversion function from becoming as large as a reverse current of a Schottky junction.SOLUTION: A photoelectric conversion device at least comprises: a p-n junction having a photoelectric conversion function; and a field-effect transistor. 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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES |
| title | PHOTOELECTRIC CONVERSION DEVICE, PHOTOELECTRIC CONVERSION ARRAY AND IMAGING APPARATUS |
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