SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device that allows improving the current driving capability of a RCAT.SOLUTION: A semiconductor substrate 11 has gate grooves 13. A diffusion layer 12 is formed on a surface region of the semiconductor substrate 11 corresponding to upper portions of t...

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1. Verfasser:	MOROOKA SATORU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	MOROOKA SATORU
description	PROBLEM TO BE SOLVED: To provide a semiconductor device that allows improving the current driving capability of a RCAT.SOLUTION: A semiconductor substrate 11 has gate grooves 13. A diffusion layer 12 is formed on a surface region of the semiconductor substrate 11 corresponding to upper portions of the gate grooves 13. Gate insulating films 14 are formed on wall surfaces of the gate grooves. Gate electrodes 15 are formed inside and outside the gate grooves 13. A film 16 having compressive stress is formed on the entire surfaces of the gate electrodes 15 outside the gate grooves 13.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	SEMICONDUCTOR DEVICE
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