RESISTANCE CHANGE TYPE MEMORY

RESISTANCE CHANGE TYPE MEMORY

PROBLEM TO BE SOLVED: To provide a resistance change type memory capable of expressing the hysteresis characteristics and memory characteristics of resistance reliably with high reproducibility when compared with prior art, and to provide a manufacturing method therefor.SOLUTION: In the resistance c...

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Hauptverfasser: ARITA MASASHI, FUJIWARA ICHIRO, KAJI HIROMICHI, FUJII TAKASHI, YAMAGUCHI TAKESHI, KONDO YOJI, TAKAHASHI TSUNEO, SHIGENIWA MASAHIRO, YOSHIMARU MASAKI
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator ARITA MASASHI
FUJIWARA ICHIRO
KAJI HIROMICHI
FUJII TAKASHI
YAMAGUCHI TAKESHI
KONDO YOJI
TAKAHASHI TSUNEO
SHIGENIWA MASAHIRO
YOSHIMARU MASAKI
description PROBLEM TO BE SOLVED: To provide a resistance change type memory capable of expressing the hysteresis characteristics and memory characteristics of resistance reliably with high reproducibility when compared with prior art, and to provide a manufacturing method therefor.SOLUTION: In the resistance change type memory consisting of a PCMO layer composed of PrCaMnOand sandwiched by a lower electrode and an upper electrode, a metal oxide layer is inserted between the PCMO layer and the upper electrode or lower electrode. The metal oxide is an oxide of the metal of the upper electrode, and at least one of the upper electrode and lower electrode is composed of any one of tungsten (W), molybdenum (Mo), chromium (Cr), aluminum (Al), and silver (Ag). The resistance change type memory has two values of first low resistance state and first high resistance state in the positive DC voltage region, and two values of second high resistance state and second low resistance state in the negative DC voltage region, thus storing the information of total four values.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title RESISTANCE CHANGE TYPE MEMORY
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