IMMERSION LITHOGRAPHY APPARATUS, SHUTTER MEMBER, AND SUBSTRATE TABLE
PROBLEM TO BE SOLVED: To increase lyophobic properties of a surface of an immersion lithography apparatus.SOLUTION: An immersion lithography apparatus comprises a surface contacted by immersion liquid when used, and the surface has surface roughness of 0.2 μm or less. The immersion liquid on the sur...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | ELISSEEVA OLGA VLADIMIROVNA DZIOMKINA NINA VLADIMIROVNA |
| description | PROBLEM TO BE SOLVED: To increase lyophobic properties of a surface of an immersion lithography apparatus.SOLUTION: An immersion lithography apparatus comprises a surface contacted by immersion liquid when used, and the surface has surface roughness of 0.2 μm or less. The immersion liquid on the surface may have a contact angle of 60° or more. The surface may maintain a characteristic of the surface so that the immersion liquid on the surface has the contact angle enabling immersion for a long period of time in the immersion liquid. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2013051444A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2013051444A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2013051444A3</originalsourceid><addsrcrecordid>eNrjZHDx9PV1DQr29PdT8PEM8fB3D3IM8IhUcAwIcAxyDAkN1lEI9ggNCXENUvB19XVyDdJRcPRzUQgOdQoOAcq7KoQ4Ovm48jCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwNDYwNTQxMTE0djohQBAM69LFU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>IMMERSION LITHOGRAPHY APPARATUS, SHUTTER MEMBER, AND SUBSTRATE TABLE</title><source>esp@cenet</source><creator>ELISSEEVA OLGA VLADIMIROVNA ; DZIOMKINA NINA VLADIMIROVNA</creator><creatorcontrib>ELISSEEVA OLGA VLADIMIROVNA ; DZIOMKINA NINA VLADIMIROVNA</creatorcontrib><description>PROBLEM TO BE SOLVED: To increase lyophobic properties of a surface of an immersion lithography apparatus.SOLUTION: An immersion lithography apparatus comprises a surface contacted by immersion liquid when used, and the surface has surface roughness of 0.2 μm or less. The immersion liquid on the surface may have a contact angle of 60° or more. The surface may maintain a characteristic of the surface so that the immersion liquid on the surface has the contact angle enabling immersion for a long period of time in the immersion liquid.</description><language>eng</language><subject>ACCESSORIES THEREFOR ; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES ; APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM ; APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130314&DB=EPODOC&CC=JP&NR=2013051444A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130314&DB=EPODOC&CC=JP&NR=2013051444A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ELISSEEVA OLGA VLADIMIROVNA</creatorcontrib><creatorcontrib>DZIOMKINA NINA VLADIMIROVNA</creatorcontrib><title>IMMERSION LITHOGRAPHY APPARATUS, SHUTTER MEMBER, AND SUBSTRATE TABLE</title><description>PROBLEM TO BE SOLVED: To increase lyophobic properties of a surface of an immersion lithography apparatus.SOLUTION: An immersion lithography apparatus comprises a surface contacted by immersion liquid when used, and the surface has surface roughness of 0.2 μm or less. The immersion liquid on the surface may have a contact angle of 60° or more. The surface may maintain a characteristic of the surface so that the immersion liquid on the surface has the contact angle enabling immersion for a long period of time in the immersion liquid.</description><subject>ACCESSORIES THEREFOR</subject><subject>APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES</subject><subject>APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM</subject><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDx9PV1DQr29PdT8PEM8fB3D3IM8IhUcAwIcAxyDAkN1lEI9ggNCXENUvB19XVyDdJRcPRzUQgOdQoOAcq7KoQ4Ovm48jCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwNDYwNTQxMTE0djohQBAM69LFU</recordid><startdate>20130314</startdate><enddate>20130314</enddate><creator>ELISSEEVA OLGA VLADIMIROVNA</creator><creator>DZIOMKINA NINA VLADIMIROVNA</creator><scope>EVB</scope></search><sort><creationdate>20130314</creationdate><title>IMMERSION LITHOGRAPHY APPARATUS, SHUTTER MEMBER, AND SUBSTRATE TABLE</title><author>ELISSEEVA OLGA VLADIMIROVNA ; DZIOMKINA NINA VLADIMIROVNA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2013051444A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>ACCESSORIES THEREFOR</topic><topic>APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES</topic><topic>APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM</topic><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ELISSEEVA OLGA VLADIMIROVNA</creatorcontrib><creatorcontrib>DZIOMKINA NINA VLADIMIROVNA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ELISSEEVA OLGA VLADIMIROVNA</au><au>DZIOMKINA NINA VLADIMIROVNA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>IMMERSION LITHOGRAPHY APPARATUS, SHUTTER MEMBER, AND SUBSTRATE TABLE</title><date>2013-03-14</date><risdate>2013</risdate><abstract>PROBLEM TO BE SOLVED: To increase lyophobic properties of a surface of an immersion lithography apparatus.SOLUTION: An immersion lithography apparatus comprises a surface contacted by immersion liquid when used, and the surface has surface roughness of 0.2 μm or less. The immersion liquid on the surface may have a contact angle of 60° or more. The surface may maintain a characteristic of the surface so that the immersion liquid on the surface has the contact angle enabling immersion for a long period of time in the immersion liquid.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2013051444A |
| source | esp@cenet |
| subjects | ACCESSORIES THEREFOR APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | IMMERSION LITHOGRAPHY APPARATUS, SHUTTER MEMBER, AND SUBSTRATE TABLE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T05%3A03%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ELISSEEVA%20OLGA%20VLADIMIROVNA&rft.date=2013-03-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2013051444A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |