PLASMA PROCESSING METHOD AND PLASMA ASHING APPARATUS
PROBLEM TO BE SOLVED: To provide a processing method that can prevent or reduce a film damage on a Low-k film while performing a high speed ashing processing in a plasma ashing processing on a sample including a Low-k film.SOLUTION: A plasma processing method for performing a plasma processing on a...
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| creator | KUDO YUTAKA HIYAMA MAKOTO |
| description | PROBLEM TO BE SOLVED: To provide a processing method that can prevent or reduce a film damage on a Low-k film while performing a high speed ashing processing in a plasma ashing processing on a sample including a Low-k film.SOLUTION: A plasma processing method for performing a plasma processing on a sample including a Low-k film 15 includes: performing plasma etching on the sample; and performing plasma ashing on the sample including the Low-k film 15 with a resist mask 13, a carbon hard mask 14 and reaction products 16 that have been subjected to plasma etching in the plasma etching process by a carbon (C+) radical 18 and a hydrogen (H+) radical 20 generated from methane (CH) gas 19, using mixed gas including the methane (CH) gas 19, which is hydrocarbon gas, and argon (Ar) gas, which is noble gas. |
| format | Patent |
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and performing plasma ashing on the sample including the Low-k film 15 with a resist mask 13, a carbon hard mask 14 and reaction products 16 that have been subjected to plasma etching in the plasma etching process by a carbon (C+) radical 18 and a hydrogen (H+) radical 20 generated from methane (CH) gas 19, using mixed gas including the methane (CH) gas 19, which is hydrocarbon gas, and argon (Ar) gas, which is noble gas.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130204&DB=EPODOC&CC=JP&NR=2013026399A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130204&DB=EPODOC&CC=JP&NR=2013026399A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KUDO YUTAKA</creatorcontrib><creatorcontrib>HIYAMA MAKOTO</creatorcontrib><title>PLASMA PROCESSING METHOD AND PLASMA ASHING APPARATUS</title><description>PROBLEM TO BE SOLVED: To provide a processing method that can prevent or reduce a film damage on a Low-k film while performing a high speed ashing processing in a plasma ashing processing on a sample including a Low-k film.SOLUTION: A plasma processing method for performing a plasma processing on a sample including a Low-k film 15 includes: performing plasma etching on the sample; 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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | PLASMA PROCESSING METHOD AND PLASMA ASHING APPARATUS |
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