SINGLE CRYSTAL PULLING-UP METHOD

PROBLEM TO BE SOLVED: To provide a single crystal pulling-up method which can grow a single crystal having a high oxygen concentration of at least 1.3×10atoms/cmirrespective of the size of the single crystal to be pulled up without causing dislocation.SOLUTION: When the single crystal C is pulled up...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	ABE SUNAO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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