NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To prevent decrease in power efficiency of a nitride semiconductor light-emitting element at a time of a large current drive.SOLUTION: A nitride semiconductor light-emitting element comprises: a first conductivity type nitride semiconductor layer; a superlattice layer provided...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KAIHARA TATSU, KOMADA SATOSHI, FUDETA MAYUKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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