NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To prevent decrease in power efficiency of a nitride semiconductor light-emitting element at a time of a large current drive.SOLUTION: A nitride semiconductor light-emitting element comprises: a first conductivity type nitride semiconductor layer; a superlattice layer provided on the first conductivity type nitride semiconductor layer; an active layer provided on the superlattice layer; and a second conductivity type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer.