SEMICONDUCTOR STORAGE DEVICE

PROBLEM TO BE SOLVED: To realize a semiconductor storage device excellent in long-term data retention characteristics capable of efficiently detecting and correcting an error of data during readout.SOLUTION: In a semiconductor storage device 1 in which a variable resistive element including a metal oxide is used for information storage, a voltage amplitude of rewriting voltage pulse to apply when transiting the variable resistive element to a high resistance state is set to be a voltage range having data retention characteristics in which a resistance value of high resistance state after a transition increases as time passes, specifically, the voltage range such that the resistance value of high resistance state after the transition increases toward a predetermined peak value as the voltage amplitude increases. Further, in the case where an error of data is detected by an ECC circuit 106, the data essentially in low resistance state is considered to have changed to high resistance state, and variable resistive elements of all memory cells having an error detected are rewritten into low resistance state to correct a bit having an error detected.