GATE CONTROL CIRCUIT FOR SEMICONDUCTOR SWITCHING ELEMENT
PROBLEM TO BE SOLVED: To ensure and facilitate overvoltage suppression gate control for suppressing heating of a switching element, and ensure and facilitate oscillation prevention and distributed voltage balance control in a semiconductor switch circuit comprising a plurality of switching elements...
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| creator | OGURA KAZUYA URUSHIBATA SHOTA |
| description | PROBLEM TO BE SOLVED: To ensure and facilitate overvoltage suppression gate control for suppressing heating of a switching element, and ensure and facilitate oscillation prevention and distributed voltage balance control in a semiconductor switch circuit comprising a plurality of switching elements connected in series.SOLUTION: Independently of a main gate current to an IGBT 1 applied through a gate resistance A by a gate drive circuit 2, a voltage-compensated gate control circuit 3-6 injects a voltage-compensated gate current via a gate resistance B when a collector-emitter voltage Vce of the IGBT 1 exceeds a threshold value, and stops injecting the voltage-compensated gate current when the voltage Vce falls below the threshold value. The gate resistance B is set to a lower resistance value than that of the gate resistance A. After the injection of the voltage-compensated gate current, a charge amount substantially equivalent to the injection amount of the gate current is drawn from the IGBT 1 as a gate current. |
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The gate resistance B is set to a lower resistance value than that of the gate resistance A. After the injection of the voltage-compensated gate current, a charge amount substantially equivalent to the injection amount of the gate current is drawn from the IGBT 1 as a gate current.</description><language>eng</language><subject>APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS ; BASIC ELECTRONIC CIRCUITRY ; CONTROL OR REGULATION THEREOF ; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER ; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ; ELECTRICITY ; GENERATION ; PULSE TECHNIQUE</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121220&DB=EPODOC&CC=JP&NR=2012253488A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121220&DB=EPODOC&CC=JP&NR=2012253488A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OGURA KAZUYA</creatorcontrib><creatorcontrib>URUSHIBATA SHOTA</creatorcontrib><title>GATE CONTROL CIRCUIT FOR SEMICONDUCTOR SWITCHING ELEMENT</title><description>PROBLEM TO BE SOLVED: To ensure and facilitate overvoltage suppression gate control for suppressing heating of a switching element, and ensure and facilitate oscillation prevention and distributed voltage balance control in a semiconductor switch circuit comprising a plurality of switching elements connected in series.SOLUTION: Independently of a main gate current to an IGBT 1 applied through a gate resistance A by a gate drive circuit 2, a voltage-compensated gate control circuit 3-6 injects a voltage-compensated gate current via a gate resistance B when a collector-emitter voltage Vce of the IGBT 1 exceeds a threshold value, and stops injecting the voltage-compensated gate current when the voltage Vce falls below the threshold value. The gate resistance B is set to a lower resistance value than that of the gate resistance A. 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The gate resistance B is set to a lower resistance value than that of the gate resistance A. After the injection of the voltage-compensated gate current, a charge amount substantially equivalent to the injection amount of the gate current is drawn from the IGBT 1 as a gate current.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRONIC CIRCUITRY CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRICITY GENERATION PULSE TECHNIQUE |
| title | GATE CONTROL CIRCUIT FOR SEMICONDUCTOR SWITCHING ELEMENT |
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