SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To reduce the area of an ESD protection circuit and the manufacturing cost by further providing an avalanche diode on a collector region side of a lateral IGBT by using a PN junction, and to provide a semiconductor device including the ESD protection circuit that prevents eleme...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!