SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To reduce the area of an ESD protection circuit and the manufacturing cost by further providing an avalanche diode on a collector region side of a lateral IGBT by using a PN junction, and to provide a semiconductor device including the ESD protection circuit that prevents eleme...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: UENISHI AKIO
Format: Patent
Sprache:eng
Schlagworte:
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