METHOD FOR FORMING Ni FILM

PROBLEM TO BE SOLVED: To provide a method for forming an Ni film having a desired physical properties and a wide use range by setting the film-forming conditions such as a film-forming temperature, film-forming pressure, or the use amount or usage ratio of a reducing gas.SOLUTION: The method for forming the Ni film includes the steps of: maintaining the temperature of an Si substrate at a desired level in a vacuum chamber; introducing into the vacuum chamber, a nickel alkylamidinate (alkyl is selected from the group consisting of methyl, ethyl, butyl and propyl), Hand NH; and then forming the Ni film according to a CVD method. The film-forming temperature is set at a level of >280°C but ≤350°C.