MICROFABRICATION PROCESSING AGENT AND MICROFABRICATION PROCESSING METHOD

PROBLEM TO BE SOLVED: To provide a microfabrication processing agent capable of microfabricating a silicon oxide film selectively when microfabricating a multilayer film laminating at least a silicon oxide film and a silicon nitride film, and to provide a microfabrication processing method using the...

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Bibliographische Detailangaben
Hauptverfasser:	MIYASHITA MASAYUKI, KUJIME TAKANOBU, FUTAI KEIICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a microfabrication processing agent capable of microfabricating a silicon oxide film selectively when microfabricating a multilayer film laminating at least a silicon oxide film and a silicon nitride film, and to provide a microfabrication processing method using the same.SOLUTION: The microfabrication processing agent contains (a) at least any one kind of 0.01-15 wt% of hydrogen fluoride, or 0.1-40 wt% of ammonium fluoride, (b) water, and (C) at least one kind of water soluble polymer selected from a group consisting of 0.001-10 wt% of styrene sulfonic acid, styrene sulfonic acid ammonium, and styrene sulfonic acid ester. When a multilayer film laminating at least a silicon oxide film and a silicon nitride film is microfabricated, the silicon oxide film is microfabricated selectively.