RESIST ANTISTATIC FILM LAMINATE, METHOD FOR PRODUCING RELIEF PATTERN, AND ELECTRONIC COMPONENT
PROBLEM TO BE SOLVED: To provide a resist antistatic film laminate, which avoids a charge-up phenomenon, suppresses changes in the sensitivity after electron beam drawing, allows pattern formation in dimensions as designed, and gives a fine relief pattern with high sensitivity, high resolution and l...
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Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a resist antistatic film laminate, which avoids a charge-up phenomenon, suppresses changes in the sensitivity after electron beam drawing, allows pattern formation in dimensions as designed, and gives a fine relief pattern with high sensitivity, high resolution and low line edge roughness, while the laminate has alkali developability.SOLUTION: The resist antistatic film laminate includes at least (I) a resist film comprising the following negative resist composition and (II) an antistatic film on a support body. The negative resist composition comprises: a phenolic compound (A) having two or more phenolic hydroxyl groups in one molecule, having at least one kind of substituent selected from a hydroxymethyl group and an alkoxymethyl group at an ortho-position of the phenolic hydroxyl group, and having a molecular weight of 400 to 2500; and an acid generator (B) that generates sulfonic acid having no fluorine atom bonded thereto by irradiation with electron beams. The content of the phenolic compound (A) is 70 wt.% or more in the whole solid content of the negative resist composition. |
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