PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM
PROBLEM TO BE SOLVED: To provide a parallel plate type plasma processing apparatus in which, when plasma processing is performed while adjusting an upper electrode 40 to the setting temperature by a temperature adjustment mechanism 47, deterioration in processing uniformity between substrates is sup...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | KANAYA KAZUHIRO FUKASAWA KIMIHIRO OZAWA WATARU OKI TATSUYA |
| description | PROBLEM TO BE SOLVED: To provide a parallel plate type plasma processing apparatus in which, when plasma processing is performed while adjusting an upper electrode 40 to the setting temperature by a temperature adjustment mechanism 47, deterioration in processing uniformity between substrates is suppressed which is caused by changes in the processing environmental atmosphere.SOLUTION: A plasma processing apparatus includes: a recipe storage section 56 in which processing recipe for performing plasma processing is stored; a correction value setting section 54 in which the accumulated time of plasma processing or the number of sheets processed of a substrate after new use of a second electrode is started, and a correction value of the setting temperature of the second electrode are set by an input screen; a storage section 55 which stores the corrected setting value; and a program which adds the setting temperature written in the processing recipe of an upper electrode 40 to the correction value in the storage section 55, and controls a temperature adjustment mechanism 47 based on the corrected setting temperature. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2012216639A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2012216639A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2012216639A3</originalsourceid><addsrcrecordid>eNrjZPAI8HEM9nVUCAjyd3YNDvb0c1dwDAhwDHIMCQ3WUcCU9HUN8fB3UXD0c1EIDvEPcnR3BQq5eIb68jCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwNDIyNDMzNjS0djohQBAG6ULWA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM</title><source>esp@cenet</source><creator>KANAYA KAZUHIRO ; FUKASAWA KIMIHIRO ; OZAWA WATARU ; OKI TATSUYA</creator><creatorcontrib>KANAYA KAZUHIRO ; FUKASAWA KIMIHIRO ; OZAWA WATARU ; OKI TATSUYA</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a parallel plate type plasma processing apparatus in which, when plasma processing is performed while adjusting an upper electrode 40 to the setting temperature by a temperature adjustment mechanism 47, deterioration in processing uniformity between substrates is suppressed which is caused by changes in the processing environmental atmosphere.SOLUTION: A plasma processing apparatus includes: a recipe storage section 56 in which processing recipe for performing plasma processing is stored; a correction value setting section 54 in which the accumulated time of plasma processing or the number of sheets processed of a substrate after new use of a second electrode is started, and a correction value of the setting temperature of the second electrode are set by an input screen; a storage section 55 which stores the corrected setting value; and a program which adds the setting temperature written in the processing recipe of an upper electrode 40 to the correction value in the storage section 55, and controls a temperature adjustment mechanism 47 based on the corrected setting temperature.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121108&DB=EPODOC&CC=JP&NR=2012216639A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121108&DB=EPODOC&CC=JP&NR=2012216639A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KANAYA KAZUHIRO</creatorcontrib><creatorcontrib>FUKASAWA KIMIHIRO</creatorcontrib><creatorcontrib>OZAWA WATARU</creatorcontrib><creatorcontrib>OKI TATSUYA</creatorcontrib><title>PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM</title><description>PROBLEM TO BE SOLVED: To provide a parallel plate type plasma processing apparatus in which, when plasma processing is performed while adjusting an upper electrode 40 to the setting temperature by a temperature adjustment mechanism 47, deterioration in processing uniformity between substrates is suppressed which is caused by changes in the processing environmental atmosphere.SOLUTION: A plasma processing apparatus includes: a recipe storage section 56 in which processing recipe for performing plasma processing is stored; a correction value setting section 54 in which the accumulated time of plasma processing or the number of sheets processed of a substrate after new use of a second electrode is started, and a correction value of the setting temperature of the second electrode are set by an input screen; a storage section 55 which stores the corrected setting value; and a program which adds the setting temperature written in the processing recipe of an upper electrode 40 to the correction value in the storage section 55, and controls a temperature adjustment mechanism 47 based on the corrected setting temperature.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAI8HEM9nVUCAjyd3YNDvb0c1dwDAhwDHIMCQ3WUcCU9HUN8fB3UXD0c1EIDvEPcnR3BQq5eIb68jCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwNDIyNDMzNjS0djohQBAG6ULWA</recordid><startdate>20121108</startdate><enddate>20121108</enddate><creator>KANAYA KAZUHIRO</creator><creator>FUKASAWA KIMIHIRO</creator><creator>OZAWA WATARU</creator><creator>OKI TATSUYA</creator><scope>EVB</scope></search><sort><creationdate>20121108</creationdate><title>PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM</title><author>KANAYA KAZUHIRO ; FUKASAWA KIMIHIRO ; OZAWA WATARU ; OKI TATSUYA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2012216639A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>KANAYA KAZUHIRO</creatorcontrib><creatorcontrib>FUKASAWA KIMIHIRO</creatorcontrib><creatorcontrib>OZAWA WATARU</creatorcontrib><creatorcontrib>OKI TATSUYA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KANAYA KAZUHIRO</au><au>FUKASAWA KIMIHIRO</au><au>OZAWA WATARU</au><au>OKI TATSUYA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM</title><date>2012-11-08</date><risdate>2012</risdate><abstract>PROBLEM TO BE SOLVED: To provide a parallel plate type plasma processing apparatus in which, when plasma processing is performed while adjusting an upper electrode 40 to the setting temperature by a temperature adjustment mechanism 47, deterioration in processing uniformity between substrates is suppressed which is caused by changes in the processing environmental atmosphere.SOLUTION: A plasma processing apparatus includes: a recipe storage section 56 in which processing recipe for performing plasma processing is stored; a correction value setting section 54 in which the accumulated time of plasma processing or the number of sheets processed of a substrate after new use of a second electrode is started, and a correction value of the setting temperature of the second electrode are set by an input screen; a storage section 55 which stores the corrected setting value; and a program which adds the setting temperature written in the processing recipe of an upper electrode 40 to the correction value in the storage section 55, and controls a temperature adjustment mechanism 47 based on the corrected setting temperature.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2012216639A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T21%3A55%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KANAYA%20KAZUHIRO&rft.date=2012-11-08&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2012216639A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |