METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL

METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL

PROBLEM TO BE SOLVED: To provide a method for producing a group 13 element nitride crystal by an industrially economical method capable of stably and continuously maintaining a sufficiently high crystal growth rate.SOLUTION: The method for producing the group 13 element nitride crystal comprises gro...

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Bibliographische Detailangaben
Hauptverfasser: TAWARA TAKESHI, SAITO TAKEYA, KATO KANAKO, FUKUMURA SHU, TERADA HIDE
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for producing a group 13 element nitride crystal by an industrially economical method capable of stably and continuously maintaining a sufficiently high crystal growth rate.SOLUTION: The method for producing the group 13 element nitride crystal comprises growing the group 13 element nitride crystal in a liquid phase containing at least Na, a group 13 element and nitrogen element. In the method, a gaseous phase making contact with the surface of the liquid phase and filling at least a space from the surface of the liquid phase to a height of 20 mm from the surface is present, and the crystal growth is carried out under a condition to satisfy formula (1): 0