SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
PROBLEM TO BE SOLVED: To achieve improvement in bonding accuracy in a semiconductor device in which semiconductor substrates are bonded with each other.SOLUTION: A semiconductor device 79 comprises a first semiconductor substrate 31 and a second semiconductor substrate 45, in which a first principal...
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| creator | MATSUTANI HIROYASU TABUCHI KIYOTAKA |
| description | PROBLEM TO BE SOLVED: To achieve improvement in bonding accuracy in a semiconductor device in which semiconductor substrates are bonded with each other.SOLUTION: A semiconductor device 79 comprises a first semiconductor substrate 31 and a second semiconductor substrate 45, in which a first principal surface 31A side of the first semiconductor substrate 31 and a first principal surface 45A side of the second semiconductor substrate 45 are bonded. The semiconductor device 79 comprises warpage correction layers 13, 14 formed on at least one selected from the first principal surface 31A side of the first semiconductor substrate 31, the first principal surface 45A side of the second semiconductor substrate 45, a second principal surface 31B side of the first semiconductor substrate 31 and a second principal surface 45B side of the second semiconductor substrate 45. |
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The semiconductor device 79 comprises warpage correction layers 13, 14 formed on at least one selected from the first principal surface 31A side of the first semiconductor substrate 31, the first principal surface 45A side of the second semiconductor substrate 45, a second principal surface 31B side of the first semiconductor substrate 31 and a second principal surface 45B side of the second semiconductor substrate 45.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CLADDING OR PLATING BY SOLDERING OR WELDING ; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MACHINE TOOLS ; METAL-WORKING NOT OTHERWISE PROVIDED FOR ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SOLDERING OR UNSOLDERING ; TRANSPORTING ; WELDING ; WORKING BY LASER BEAM</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121022&DB=EPODOC&CC=JP&NR=2012204810A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121022&DB=EPODOC&CC=JP&NR=2012204810A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MATSUTANI HIROYASU</creatorcontrib><creatorcontrib>TABUCHI KIYOTAKA</creatorcontrib><title>SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD</title><description>PROBLEM TO BE SOLVED: To achieve improvement in bonding accuracy in a semiconductor device in which semiconductor substrates are bonded with each other.SOLUTION: A semiconductor device 79 comprises a first semiconductor substrate 31 and a second semiconductor substrate 45, in which a first principal surface 31A side of the first semiconductor substrate 31 and a first principal surface 45A side of the second semiconductor substrate 45 are bonded. The semiconductor device 79 comprises warpage correction layers 13, 14 formed on at least one selected from the first principal surface 31A side of the first semiconductor substrate 31, the first principal surface 45A side of the second semiconductor substrate 45, a second principal surface 31B side of the first semiconductor substrate 31 and a second principal surface 45B side of the second semiconductor substrate 45.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CLADDING OR PLATING BY SOLDERING OR WELDING</subject><subject>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MACHINE TOOLS</subject><subject>METAL-WORKING NOT OTHERWISE PROVIDED FOR</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SOLDERING OR UNSOLDERING</subject><subject>TRANSPORTING</subject><subject>WELDING</subject><subject>WORKING BY LASER BEAM</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAKdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNRwCrh6-gX6uboHBIa5OnnruDrGuLh78LDwJqWmFOcyguluRmU3FxDnD10Uwvy41OLCxKTU_NSS-K9AowMDI2MDEwsDA0cjYlSBAByIyvL</recordid><startdate>20121022</startdate><enddate>20121022</enddate><creator>MATSUTANI HIROYASU</creator><creator>TABUCHI KIYOTAKA</creator><scope>EVB</scope></search><sort><creationdate>20121022</creationdate><title>SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD</title><author>MATSUTANI HIROYASU ; TABUCHI KIYOTAKA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2012204810A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CLADDING OR PLATING BY SOLDERING OR WELDING</topic><topic>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MACHINE TOOLS</topic><topic>METAL-WORKING NOT OTHERWISE PROVIDED FOR</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SOLDERING OR UNSOLDERING</topic><topic>TRANSPORTING</topic><topic>WELDING</topic><topic>WORKING BY LASER BEAM</topic><toplevel>online_resources</toplevel><creatorcontrib>MATSUTANI HIROYASU</creatorcontrib><creatorcontrib>TABUCHI KIYOTAKA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MATSUTANI HIROYASU</au><au>TABUCHI KIYOTAKA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD</title><date>2012-10-22</date><risdate>2012</risdate><abstract>PROBLEM TO BE SOLVED: To achieve improvement in bonding accuracy in a semiconductor device in which semiconductor substrates are bonded with each other.SOLUTION: A semiconductor device 79 comprises a first semiconductor substrate 31 and a second semiconductor substrate 45, in which a first principal surface 31A side of the first semiconductor substrate 31 and a first principal surface 45A side of the second semiconductor substrate 45 are bonded. The semiconductor device 79 comprises warpage correction layers 13, 14 formed on at least one selected from the first principal surface 31A side of the first semiconductor substrate 31, the first principal surface 45A side of the second semiconductor substrate 45, a second principal surface 31B side of the first semiconductor substrate 31 and a second principal surface 45B side of the second semiconductor substrate 45.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM |
| title | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
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