SUBSTRATE TREATMENT DEVICE
PROBLEM TO BE SOLVED: To provide a substrate treatment device, securable of a long-time large amount supply of raw material gas.SOLUTION: The substrate treatment device includes: a treatment chamber for housing and treating a wafer; a bubbler 220a for vaporizing a liquid raw material by bubbling wit...
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| creator | ITAYA HIDEJI |
| description | PROBLEM TO BE SOLVED: To provide a substrate treatment device, securable of a long-time large amount supply of raw material gas.SOLUTION: The substrate treatment device includes: a treatment chamber for housing and treating a wafer; a bubbler 220a for vaporizing a liquid raw material by bubbling with a carrier gas; and a raw material gas supply pipe 213a for supplying the raw material gas generated by vaporizing the liquid raw material in the bubbler 220a into the treatment chamber. The bubbler 220a includes a container for storing the liquid raw material, and a carrier gas supply pipe 237a for supplying the carrier gas into the liquid raw material, a tip portion of the carrier gas supply pipe being dipped in the liquid raw material stored in the container. A diffusion plate 238 for horizontally diffusing the carrier gas supplied into the liquid raw material through the carrier gas supply pipe 237a is laid on the bottom within the bubbler 220a, and the diffusion plate 237 has a plurality of ejection holes 239 to eject the horizontally diffused carrier gas upward from a plurality of positions. |
| format | Patent |
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The bubbler 220a includes a container for storing the liquid raw material, and a carrier gas supply pipe 237a for supplying the carrier gas into the liquid raw material, a tip portion of the carrier gas supply pipe being dipped in the liquid raw material stored in the container. A diffusion plate 238 for horizontally diffusing the carrier gas supplied into the liquid raw material through the carrier gas supply pipe 237a is laid on the bottom within the bubbler 220a, and the diffusion plate 237 has a plurality of ejection holes 239 to eject the horizontally diffused carrier gas upward from a plurality of positions.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120719&DB=EPODOC&CC=JP&NR=2012136743A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120719&DB=EPODOC&CC=JP&NR=2012136743A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ITAYA HIDEJI</creatorcontrib><title>SUBSTRATE TREATMENT DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a substrate treatment device, securable of a long-time large amount supply of raw material gas.SOLUTION: The substrate treatment device includes: a treatment chamber for housing and treating a wafer; a bubbler 220a for vaporizing a liquid raw material by bubbling with a carrier gas; and a raw material gas supply pipe 213a for supplying the raw material gas generated by vaporizing the liquid raw material in the bubbler 220a into the treatment chamber. The bubbler 220a includes a container for storing the liquid raw material, and a carrier gas supply pipe 237a for supplying the carrier gas into the liquid raw material, a tip portion of the carrier gas supply pipe being dipped in the liquid raw material stored in the container. 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The bubbler 220a includes a container for storing the liquid raw material, and a carrier gas supply pipe 237a for supplying the carrier gas into the liquid raw material, a tip portion of the carrier gas supply pipe being dipped in the liquid raw material stored in the container. A diffusion plate 238 for horizontally diffusing the carrier gas supplied into the liquid raw material through the carrier gas supply pipe 237a is laid on the bottom within the bubbler 220a, and the diffusion plate 237 has a plurality of ejection holes 239 to eject the horizontally diffused carrier gas upward from a plurality of positions.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SUBSTRATE TREATMENT DEVICE |
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