INSULATION SUBSTRATE, MANUFACTURING METHOD THEREOF, AND POWER SEMICONDUCTOR DEVICE

INSULATION SUBSTRATE, MANUFACTURING METHOD THEREOF, AND POWER SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a power semiconductor device using an insulation substrate which maintains service life with reliability of a heat cycle even if temperature change conditions of a heat cycle test makes the transition to more strict conditions.SOLUTION: An insulation substrate accord...

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Hauptverfasser: OTA TATSUO, NISHIBORI HIROSHI, SATO MASAAKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator OTA TATSUO
NISHIBORI HIROSHI
SATO MASAAKI
description PROBLEM TO BE SOLVED: To provide a power semiconductor device using an insulation substrate which maintains service life with reliability of a heat cycle even if temperature change conditions of a heat cycle test makes the transition to more strict conditions.SOLUTION: An insulation substrate according to this invention includes a ceramic base material 202, a rear surface pattern 203a formed on a rear surface of the ceramic base material 202, and a heat sink 3 joined to the rear surface pattern 203a through solder 5 serving as a joining member. The rear surface pattern 203a has dimples 204 on a surface contacting with the solder 5.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title INSULATION SUBSTRATE, MANUFACTURING METHOD THEREOF, AND POWER SEMICONDUCTOR DEVICE
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