COMPOSITION FOR PRODUCTION OF COMPLEX OXIDE THIN FILM

COMPOSITION FOR PRODUCTION OF COMPLEX OXIDE THIN FILM

PROBLEM TO BE SOLVED: To provide a new composition which is based on diethyl zinc or a partial hydrolyzate of an organic zinc compound such as diethyl zinc etc., and with which a complex oxide thin film applicable to an oxide semiconductor film etc. such as an IGZO can be deposited.SOLUTION: The com...

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Hauptverfasser: HAGA KENICHI, TOKUTOME KOICHI, INABA KOICHIRO, TOYODA KOJI
Format: Patent
Sprache:eng
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CHEMISTRY
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F
INORGANIC CHEMISTRY
METALLURGY
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creator HAGA KENICHI
TOKUTOME KOICHI
INABA KOICHIRO
TOYODA KOJI
description PROBLEM TO BE SOLVED: To provide a new composition which is based on diethyl zinc or a partial hydrolyzate of an organic zinc compound such as diethyl zinc etc., and with which a complex oxide thin film applicable to an oxide semiconductor film etc. such as an IGZO can be deposited.SOLUTION: The composition for production of a complex oxide thin film contains an organic zinc compound represented by general formula (1) or a partial hydrolyzate of the organic zinc compound with water, and a compound of a group 3B element or a partial hydrolyzate of the compound of the group 3B element with water, wherein the molar ratio of the group 3B element to zinc is >0.1 and ≤5. R-Zn-R(1) (in formula, Ris a straight-chain or branched 1-7C alkyl group). The composition further optionally contains an organic solvent.
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subjects CHEMISTRY
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F
INORGANIC CHEMISTRY
METALLURGY
title COMPOSITION FOR PRODUCTION OF COMPLEX OXIDE THIN FILM
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