CHEMICAL MECHANICAL POLISHING PAD AND CHEMICAL MECHANICAL POLISHING METHOD
PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing pad which can combine enhancement of planarity of a polished surface and reduction of polishing defects (scratch) in the CMP, and to provide a chemical mechanical polishing method using the chemical mechanical polishing pad.SOLUTION: T...
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| creator | TANO HIROYUKI NISHIGUCHI NAOKI TONSHO SHINJI SATO KEIICHI SHIDA HIROTAKA |
| description | PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing pad which can combine enhancement of planarity of a polished surface and reduction of polishing defects (scratch) in the CMP, and to provide a chemical mechanical polishing method using the chemical mechanical polishing pad.SOLUTION: The chemical mechanical polishing pad has a polishing layer formed of a plurality of layers. The polishing layer has at least a first layer having a polishing surface that comes in contact with a polished article when chemical mechanical polishing is performed, and a second layer that is in contact with the first layer on the surface facing the polishing surface of the first layer. The duro D hardness (D1) of the first layer measured after immersing into water of 23°C for one hour and the duro D hardness (D2) of the second layer measured without immersing into water satisfy a relation D1 |
| format | Patent |
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The polishing layer has at least a first layer having a polishing surface that comes in contact with a polished article when chemical mechanical polishing is performed, and a second layer that is in contact with the first layer on the surface facing the polishing surface of the first layer. The duro D hardness (D1) of the first layer measured after immersing into water of 23°C for one hour and the duro D hardness (D2) of the second layer measured without immersing into water satisfy a relation D1<D2.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; PERFORMING OPERATIONS ; POLISHING ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120510&DB=EPODOC&CC=JP&NR=2012089599A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120510&DB=EPODOC&CC=JP&NR=2012089599A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TANO HIROYUKI</creatorcontrib><creatorcontrib>NISHIGUCHI NAOKI</creatorcontrib><creatorcontrib>TONSHO SHINJI</creatorcontrib><creatorcontrib>SATO KEIICHI</creatorcontrib><creatorcontrib>SHIDA HIROTAKA</creatorcontrib><title>CHEMICAL MECHANICAL POLISHING PAD AND CHEMICAL MECHANICAL POLISHING METHOD</title><description>PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing pad which can combine enhancement of planarity of a polished surface and reduction of polishing defects (scratch) in the CMP, and to provide a chemical mechanical polishing method using the chemical mechanical polishing pad.SOLUTION: The chemical mechanical polishing pad has a polishing layer formed of a plurality of layers. The polishing layer has at least a first layer having a polishing surface that comes in contact with a polished article when chemical mechanical polishing is performed, and a second layer that is in contact with the first layer on the surface facing the polishing surface of the first layer. 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The polishing layer has at least a first layer having a polishing surface that comes in contact with a polished article when chemical mechanical polishing is performed, and a second layer that is in contact with the first layer on the surface facing the polishing surface of the first layer. The duro D hardness (D1) of the first layer measured after immersing into water of 23°C for one hour and the duro D hardness (D2) of the second layer measured without immersing into water satisfy a relation D1<D2.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING |
| title | CHEMICAL MECHANICAL POLISHING PAD AND CHEMICAL MECHANICAL POLISHING METHOD |
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