FUNCTIONAL FILM AND METHOD FOR MANUFACTURING FUNCTIONAL FILM

PROBLEM TO BE SOLVED: To provide a method for manufacturing a functional film, which can develop a target gas barrier performance according to a film thickness and also stably form a gas barrier film excellent in temporal stability when forming an inorganic film by a plasma chemical vapor deposition...

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Bibliographische Detailangaben
Hauptverfasser: TONOHARA KOUJI, FUJINAWA ATSUSHI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for manufacturing a functional film, which can develop a target gas barrier performance according to a film thickness and also stably form a gas barrier film excellent in temporal stability when forming an inorganic film by a plasma chemical vapor deposition (CVD) while conveying a long substrate having a surface formed of an organic material in a longitudinal direction.SOLUTION: In the method for manufacturing a functional film, a plasma electron density exerted at the most upstream position in a conveyance direction of the substrate is controlled lower than that at the most downstream position between electrodes in an electrode pair.