CARBON CRUCIBLE AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL BY USING CARBON CRUCIBLE
PROBLEM TO BE SOLVED: To provide a carbon crucible which is used for supporting and holding a quartz glass crucible for accommodating a molten material in a device for producing single crystals or poly-crystals such as a semiconductor material or a solar cell material, and which supports the quartz...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | SOTODANI EIICHI TSUSHIMA EIKI MORI TAKAKAZU YOSHIMITSU DAISHI |
| description | PROBLEM TO BE SOLVED: To provide a carbon crucible which is used for supporting and holding a quartz glass crucible for accommodating a molten material in a device for producing single crystals or poly-crystals such as a semiconductor material or a solar cell material, and which supports the quartz glass crucible to deter the deformation and easily detaches the quartz glass crucible after refrigeration.SOLUTION: The carbon crucible 1 includes a counter part 2 for constituting a crucible bottom and a cylindrical body 3 superimposed on or inserted into the counter part 2. The counter part 2 comprises a graphite material. The cylindrical body 3 comprises a carbon fiber-reinforced-carbon-combined material formed by laminating a carbon fiber fabric cloth 4. A discontinuous part F is installed from a one end part to the other one end part of the cylindrical body 3. In the discontinuous part F, a carbon fiber-reinforced-combined material is present on at least one part of a direction vertical to the axis line of the cylindrical body 3.The carbon crucible has a structure of demonstrating binding force in the circumferential direction of the cylindrical body 3. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2012076956A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2012076956A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2012076956A3</originalsourceid><addsrcrecordid>eNrjZIhwdgxy8vdTcA4KdfZ08nFVcPRzUfB1DfHwd1Fw8w9SCAjydwHK-LkrBHv6eDoDVQYDOUB1zkGRwSGOPgpOkQqhICEFNIN4GFjTEnOKU3mhNDeDkptriLOHbmpBfnxqcUFicmpeakm8V4CRgaGRgbmZpamZozFRigAsazF3</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CARBON CRUCIBLE AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL BY USING CARBON CRUCIBLE</title><source>esp@cenet</source><creator>SOTODANI EIICHI ; TSUSHIMA EIKI ; MORI TAKAKAZU ; YOSHIMITSU DAISHI</creator><creatorcontrib>SOTODANI EIICHI ; TSUSHIMA EIKI ; MORI TAKAKAZU ; YOSHIMITSU DAISHI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a carbon crucible which is used for supporting and holding a quartz glass crucible for accommodating a molten material in a device for producing single crystals or poly-crystals such as a semiconductor material or a solar cell material, and which supports the quartz glass crucible to deter the deformation and easily detaches the quartz glass crucible after refrigeration.SOLUTION: The carbon crucible 1 includes a counter part 2 for constituting a crucible bottom and a cylindrical body 3 superimposed on or inserted into the counter part 2. The counter part 2 comprises a graphite material. The cylindrical body 3 comprises a carbon fiber-reinforced-carbon-combined material formed by laminating a carbon fiber fabric cloth 4. A discontinuous part F is installed from a one end part to the other one end part of the cylindrical body 3. In the discontinuous part F, a carbon fiber-reinforced-combined material is present on at least one part of a direction vertical to the axis line of the cylindrical body 3.The carbon crucible has a structure of demonstrating binding force in the circumferential direction of the cylindrical body 3.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; ARTIFICIAL STONE ; CEMENTS ; CERAMICS ; CHEMISTRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; CRYSTAL GROWTH ; LIME, MAGNESIA ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; REFRACTORIES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SLAG ; TREATMENT OF NATURAL STONE ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120419&DB=EPODOC&CC=JP&NR=2012076956A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120419&DB=EPODOC&CC=JP&NR=2012076956A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SOTODANI EIICHI</creatorcontrib><creatorcontrib>TSUSHIMA EIKI</creatorcontrib><creatorcontrib>MORI TAKAKAZU</creatorcontrib><creatorcontrib>YOSHIMITSU DAISHI</creatorcontrib><title>CARBON CRUCIBLE AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL BY USING CARBON CRUCIBLE</title><description>PROBLEM TO BE SOLVED: To provide a carbon crucible which is used for supporting and holding a quartz glass crucible for accommodating a molten material in a device for producing single crystals or poly-crystals such as a semiconductor material or a solar cell material, and which supports the quartz glass crucible to deter the deformation and easily detaches the quartz glass crucible after refrigeration.SOLUTION: The carbon crucible 1 includes a counter part 2 for constituting a crucible bottom and a cylindrical body 3 superimposed on or inserted into the counter part 2. The counter part 2 comprises a graphite material. The cylindrical body 3 comprises a carbon fiber-reinforced-carbon-combined material formed by laminating a carbon fiber fabric cloth 4. A discontinuous part F is installed from a one end part to the other one end part of the cylindrical body 3. In the discontinuous part F, a carbon fiber-reinforced-combined material is present on at least one part of a direction vertical to the axis line of the cylindrical body 3.The carbon crucible has a structure of demonstrating binding force in the circumferential direction of the cylindrical body 3.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>ARTIFICIAL STONE</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>CRYSTAL GROWTH</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>REFRACTORIES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SLAG</subject><subject>TREATMENT OF NATURAL STONE</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIhwdgxy8vdTcA4KdfZ08nFVcPRzUfB1DfHwd1Fw8w9SCAjydwHK-LkrBHv6eDoDVQYDOUB1zkGRwSGOPgpOkQqhICEFNIN4GFjTEnOKU3mhNDeDkptriLOHbmpBfnxqcUFicmpeakm8V4CRgaGRgbmZpamZozFRigAsazF3</recordid><startdate>20120419</startdate><enddate>20120419</enddate><creator>SOTODANI EIICHI</creator><creator>TSUSHIMA EIKI</creator><creator>MORI TAKAKAZU</creator><creator>YOSHIMITSU DAISHI</creator><scope>EVB</scope></search><sort><creationdate>20120419</creationdate><title>CARBON CRUCIBLE AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL BY USING CARBON CRUCIBLE</title><author>SOTODANI EIICHI ; TSUSHIMA EIKI ; MORI TAKAKAZU ; YOSHIMITSU DAISHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2012076956A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>ARTIFICIAL STONE</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>CRYSTAL GROWTH</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>REFRACTORIES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SLAG</topic><topic>TREATMENT OF NATURAL STONE</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>SOTODANI EIICHI</creatorcontrib><creatorcontrib>TSUSHIMA EIKI</creatorcontrib><creatorcontrib>MORI TAKAKAZU</creatorcontrib><creatorcontrib>YOSHIMITSU DAISHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SOTODANI EIICHI</au><au>TSUSHIMA EIKI</au><au>MORI TAKAKAZU</au><au>YOSHIMITSU DAISHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CARBON CRUCIBLE AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL BY USING CARBON CRUCIBLE</title><date>2012-04-19</date><risdate>2012</risdate><abstract>PROBLEM TO BE SOLVED: To provide a carbon crucible which is used for supporting and holding a quartz glass crucible for accommodating a molten material in a device for producing single crystals or poly-crystals such as a semiconductor material or a solar cell material, and which supports the quartz glass crucible to deter the deformation and easily detaches the quartz glass crucible after refrigeration.SOLUTION: The carbon crucible 1 includes a counter part 2 for constituting a crucible bottom and a cylindrical body 3 superimposed on or inserted into the counter part 2. The counter part 2 comprises a graphite material. The cylindrical body 3 comprises a carbon fiber-reinforced-carbon-combined material formed by laminating a carbon fiber fabric cloth 4. A discontinuous part F is installed from a one end part to the other one end part of the cylindrical body 3. In the discontinuous part F, a carbon fiber-reinforced-combined material is present on at least one part of a direction vertical to the axis line of the cylindrical body 3.The carbon crucible has a structure of demonstrating binding force in the circumferential direction of the cylindrical body 3.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2012076956A |
| source | esp@cenet |
| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR ARTIFICIAL STONE CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CRYSTAL GROWTH LIME, MAGNESIA METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL REFRACTORIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SLAG TREATMENT OF NATURAL STONE UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | CARBON CRUCIBLE AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL BY USING CARBON CRUCIBLE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T11%3A59%3A56IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SOTODANI%20EIICHI&rft.date=2012-04-19&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2012076956A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |