POLISHING COMPOSITION AND POLISHING METHOD

PROBLEM TO BE SOLVED: To provide a polishing composition which can be used suitably in polishing for forming the interconnections of a semiconductor device, and to provide a polishing method using it.SOLUTION: The polishing composition contains a protective film formation agent which is a compound represented by the following chemical formula (1). In the chemical formula (1), Ris a hydroxyl group or an amino group, and Rto Rare a hydrogen atom, a hydroxyl group, an amino group, an amido group, a nitro group, a methoxy group, an ethoxy group, a halogen group, an alkyl group of 1 to 4C, or a functional group represented by the following chemical formula (2) or (3), independently.