PATTERN FORMATION METHOD AND DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To form a pattern that includes a non-periodic part and is finer than the resolution limit of an exposure apparatus by using the exposure apparatus.SOLUTION: In a pattern formation method, a first L and S pattern 71 is formed on a wafer W, a first protective layer 48, a second...

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Bibliographische Detailangaben
Hauptverfasser:	YAMATO SOICHI, UMADATE TOSHIKAZU, FUJIWARA TOMOHARU
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To form a pattern that includes a non-periodic part and is finer than the resolution limit of an exposure apparatus by using the exposure apparatus.SOLUTION: In a pattern formation method, a first L and S pattern 71 is formed on a wafer W, a first protective layer 48, a second L and S pattern 78 a periodic direction of which is perpendicular to that of the first L and S pattern 71, and a photoresist layer 60 are formed so as to cover the first L and S pattern 71. A third pattern in which first openings 60A and 60B are included in the photoresist layer 60 is formed so as to be overlapped with a part of the second L and S pattern 78, second openings 48A and 48B are formed on the first protective layer 48 through the first openings 60A and 60B, a part of the first L and S pattern 71 is removed through the second openings 48A and 48B.