METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND ELECTRICAL APPLIANCE USING THE DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, in which, when a thick gate oxide film sufficient to secure a gate breakdown voltage of a high-voltage transistor is formed, the thick gate oxide film can be prevented from being reduced in thickness at the boundary...

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Bibliographische Detailangaben
1. Verfasser:	HIKITA TOMOYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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