THIN FILM TRANSISTOR MANUFACTURING METHOD AND THIN FILM TRANSISTOR

PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin film transistor having a gate insulator layer which is not damaged in electric insulation even by UV exposure and has source/drain electrodes that can be patterned by a printing method utilizing variation in surface wettability.SOLUTION: The manufacturing method of a thin film transistor manufactured by forming a thin film transistor by sequentially forming a gate electrode 42 and a gate insulator layer 2 on a substrate 7, disposing a source electrode 5a and a drain electrode 5b at a proper distance on the gate electrode formed with the gate insulator layer so as to face each other and forming a semiconductor layer 6 in a region including the distance, the method comprising coating the gate electrode with a solution containing a melamine derivative reacting with an active hydrogen group and a resin having an active hydrogen group and burning the solution to form a gate insulator layer with surface wettability variable by ultraviolet irradiation, varying an exposed portion of the gate insulator layer to a hydrophilic region by ultraviolet irradiation, and coating the hydrophilic region with a solution containing an electrode material by a printing method and dehydrating the hydrophilic region to form the source electrode and the drain electrode.