ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS

PROBLEM TO BE SOLVED: To provide an ion implantation method realizing a predetermined implantation amount distribution on a glass substrate by at least partially superposing a plurality of ribbon-shaped ion beams, in which a beam current density distribution of each ribbon-shaped ion beam is efficie...

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1. Verfasser: NAITO KATSUO
Format: Patent
Sprache:eng
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