METHOD OF MANUFACTURING INFRARED SENSOR DEVICE, AND THE INFRARED SENSOR DEVICE MANUFACTURED BY THE METHOD
PROBLEM TO BE SOLVED: To provide a method of manufacturing an infrared sensor device which is low-priced and superior in mass-productivity and productivity using a photosensitive dry film for an adhesive, and the infrared sensor device which is compact and low-priced.SOLUTION: When the infrared sens...
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| creator | HISHINUMA KUNIYUKI |
| description | PROBLEM TO BE SOLVED: To provide a method of manufacturing an infrared sensor device which is low-priced and superior in mass-productivity and productivity using a photosensitive dry film for an adhesive, and the infrared sensor device which is compact and low-priced.SOLUTION: When the infrared sensor device is manufactured which includes a silicon cover, a semiconductor chip, and a spacer layer for arranging the both opposite to each other at an interval, a spacer layer 11 as an adhesive layer is formed by patterning the photosensitive dry film 110 on an adhesion surface side of a silicon wafer 120 as a material of the silicon cover, and the silicon wafer 120 is bonded to a semiconductor wafer where a plurality of infrared sensor devices are formed, through the adhesive layer. The silicon wafer 120 and the semiconductor wafer which are joined together are diced thereafter into the individual infrared sensor devices. The adhesive layer is used for the spacer layer 11 of the individual infrared sensor device. |
| format | Patent |
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| language | eng |
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| subjects | COLORIMETRY ELECTRICITY MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING PHYSICS RADIATION PYROMETRY TESTING |
| title | METHOD OF MANUFACTURING INFRARED SENSOR DEVICE, AND THE INFRARED SENSOR DEVICE MANUFACTURED BY THE METHOD |
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