SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device having a MOS transistor formed on a SOI substrate, capable of stabilizing the circuit operation without thickening a BOX oxide film and a silicon layer on the SOI substrate even when a power source voltage applied to the semi...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	NEGORO TAKAAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS SEMICONDUCTOR DEVICES
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