SILICON WAFER HEAT TREATMENT METHOD
PROBLEM TO BE SOLVED: To provide a silicon wafer heat treatment method that can suppress the level of oxygen and roughness on the surface of a silicon wafer after RTP (rapid thermal processing), greatly reduce void defects, such as COP (crystal originated particles), made on the surface layer of the...
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| creator | SENDA TAKESHI ARAKI KOJI AOKI TATSUHIKO TOYODA EIJI ISOGAI HIROMICHI SUDO HARUO |
| description | PROBLEM TO BE SOLVED: To provide a silicon wafer heat treatment method that can suppress the level of oxygen and roughness on the surface of a silicon wafer after RTP (rapid thermal processing), greatly reduce void defects, such as COP (crystal originated particles), made on the surface layer of the wafer, and form high-density oxygen precipitate on the bulk portion of the wafer.SOLUTION: The method includes: providing inert gas for the surface W1 of a wafer W and oxygen-bearing gas for the reverse side W2 of the wafer W; rapidly raising the temperature to an achievable maximum temperature T1 ranging from 1300°C to 1400°C; rapidly lowering the temperature after keeping the achievable maximum temperature T1; switching the inert gas to oxygen-bearing gas when the temperature reaches T2 ranging from 700°C to 900°C during the process of lowering the temperature and providing the oxygen-bearing gas for the surface W1 of the wafer W; and diffusing oxygen in the oxygen-bearing gas inwards to the surface W1 of the wafer W. |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | SILICON WAFER HEAT TREATMENT METHOD |
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